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SOI wafer and its manufacturing method

A manufacturing method and wafer technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as the influence of device yield rate, and achieve the goal of reducing device defects, improving device yield rate, and reducing LPD defect density. Effect

Inactive Publication Date: 2004-06-02
SHIN-ETSU HANDOTAI CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The nature of this defect is not clear, but most of them are shallow pits. If the SOI layer is oxidized and thinned, holes through the SOI layer will be formed, which will affect the device yield.

Method used

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  • SOI wafer and its manufacturing method
  • SOI wafer and its manufacturing method
  • SOI wafer and its manufacturing method

Examples

Experimental program
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Embodiment Construction

[0020] The present invention will be described in detail below.

[0021] In order to produce an SOI wafer that suppresses the generation of SOI islands that occur during lift-off or reduces the density of LPD defects that exist on the surface of the SOI wafer, the inventors of the present application found that As long as the implantation amount of hydrogen ions or rare gas ions is controlled within a predetermined range, the present invention has been accomplished by examining various conditions.

[0022] SOI islands with a certain width can be observed after the lift-off heat treatment at the platform portion where the substrate surface is exposed at the edge of the SOI wafer. Furthermore, the peeling by the ion implantation peeling method may be caused by the growth of defects caused by hydrogen or rare gas generated in the peeling heat treatment, and the force of rapid volume expansion caused by the gasification of implanted hydrogen or rare gas, The main reason for this ...

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Abstract

The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 m or more existing in a surface of a SOI layer detected by a LPD, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.

Description

technical field [0001] The present invention relates to a kind of so-called ion implantation stripping method (also known as hydrogen ion stripping method or simple cutting-off method (smart method) that manufactures SOI (Silicon on Insulator wafer: insulating layer silicon wafer) wafer by peeling off after a kind of wafer that has implanted ions cut)), among them, suppressing the generation of SOI islands that occur on the terrace and the generation of LPD defects on the surface of the SOI wafer to reduce device defects. Background technique [0002] The ion implantation stripping method is a method of combining wafers implanted with hydrogen ions or rare gas ions and then stripping them to produce SOI wafers. However, the SOI layer cannot be transferred (duplicated) at the edge of the stripped SOI wafer, so sometimes The platform portion exposed on the surface of the substrate (supporting substrate). The main reason for this is that the bonding force between the bonded wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20B32B9/04H01L21/00H01L21/02H01L21/265H01L21/762H01L27/12
CPCH01L21/76254H01L27/12
Inventor 阿贺浩司三谷清
Owner SHIN-ETSU HANDOTAI CO LTD
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