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Opto-electronic device integration

A device and electronic chip technology, applied in the field of optoelectronic device integration

Inactive Publication Date: 2004-09-01
CUFER ASSET LTD LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] What is lacking in the prior art is a solution that eliminates the need to pattern the protective layer on the laser while allowing anti-reflection coating to be applied over the entire wafer (i.e. laser and detector)

Method used

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  • Opto-electronic device integration
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Examples

Experimental program
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Effect test

Embodiment Construction

[0063] Figure 5 An exemplary method in accordance with the techniques of the present invention is illustrated at a simplified high-level overview. This process allows close optical proximity, eliminates absorbing regions, provides higher structural integrity, and has better heat dissipation characteristics while overcoming the disadvantages of the prior art.

[0064] exist Figure 5 In this method, laser wafer 502 (consisting of lasers integrated with substrate 102) or detector wafer 504 (consisting of detectors integrated with substrate 102) is obtained using conventional techniques or purchased from some third party. device configuration). Alternatively, hybrid chips consisting of lasers and detectors integrated on a common substrate in some pattern or grouping can also be manufactured or purchased.

[0065] The etched trenches 506 process a wafer into individual discrete devices (by etching into the substrate) or in some cases into groups of suitable devices, e.g. What...

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Abstract

A method for creating a hybridized chip having at least one bottom active device (1504) coupled to an electronic chip (1518) includes combining a bottom active optical device and an electronic chip when at least some of the bottom active optical device contacts are not aligned with at least some of the electronic chip contacts. The method involves adding an insulating layer (1506), having a thickness, a first side and a second side, to the bottom active optical device by affixing the first side of the insulating layer to the surface of the bottom active optical device opposite the substrate, forming openings in the insulating layer extending from the second side to the first side at points substantially coincident with the active contacts of the optical device and the electronic chip, making the sidewalls electrically conductive, and connecting the points with the bottom active optical device contacts and the electronic chip contacts with an electrically conductive material.

Description

technical field [0001] The invention relates to the integration of optoelectronic devices, especially the integration of high yield and high density optoelectronic devices. Background technique [0002] figure 1 and 2 The method used in the prior art to attach multiple bottom emitting (or detecting) devices (also referred to as back emitting or detecting devices) to form an integrated optoelectronic device is illustrated. [0003] according to figure 1 In the method, a plurality of lasers are formed on the wafer substrate 102 in a conventional manner, and for a plurality of detectors (referred to interchangeably as photodetectors here), on its own or on the same wafer substrate as the lasers, the method also Same. Generally speaking, the portion 104 of the substrate 102 closest to the connection between the optoelectronic devices 106, 108 and the substrate 102 is made of a material that is optically transparent to the operating wavelength of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/42H01L21/68H01L25/16H01L27/144H01L27/15H01S5/02H01S5/02375H01S5/40H01S5/42
CPCH01L25/167H01L2221/68363H01L27/156H01S5/02276H01S5/4087H01S5/423G02B6/4292H01L27/144H01L21/6835H01S5/02272H01S5/02268H01L2221/68359G02B6/4249H01S5/0201H01S5/0217G02B6/4204H01S5/0224H01L24/95H01L2924/01322H01L2924/351H01L2924/12042H01S5/02375H01S5/0234H01S5/0237H01S5/02345H01L2924/00H01L31/10
Inventor 格雷格·杜德夫约翰·特雷泽
Owner CUFER ASSET LTD LLC
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