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Plasma processing device

A plasma and processing device technology, which is applied in the field of plasma processing devices and can solve the problems of difficult operation and the like

Inactive Publication Date: 2004-12-22
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, if a permanent magnet is used, the control of the formation and cancellation of the magnetic field requires operations such as attaching and detaching the magnetic field forming device, so there is a problem that it is not easy to work.

Method used

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  • Plasma processing device
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Embodiment Construction

[0034] Hereinafter, details of the present invention will be described for embodiments with reference to the drawings.

[0035] figure 1 It is a schematic configuration diagram showing an embodiment of a plasma etching apparatus using the present invention for etching a semiconductor wafer. Reference numeral 1 indicates that the material is made of, for example, aluminum, and the internal vacuum chamber can be hermetically closed. The vacuum chamber 1 is cylindrical, and its inner space is used as a plasma processing chamber.

[0036] The vacuum chamber 1 has a layered cylindrical shape composed of a small-diameter upper portion 1a and a large-diameter lower portion 1b, and is connected to a ground potential. In addition, a support table (susceptor) 2 is provided inside the vacuum chamber 1 to support a semiconductor wafer W as a substrate to be processed substantially horizontally with the surface to be processed facing upward.

[0037] The supporting base 2 is made of a m...

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PUM

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Abstract

Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3 A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3 B, 3 C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.

Description

technical field [0001] The present invention relates to a plasma processing device, in particular to a plasma processing device for performing plasma processing such as etching on a substrate to be processed such as a semiconductor wafer. Background technique [0002] Currently, in the field of manufacturing semiconductor devices, plasma is generated in a processing chamber, the plasma is applied to a substrate to be processed (for example, a semiconductor wafer, etc.) disposed in the processing chamber, and predetermined processing (such as etching, Film formation, etc.) plasma processing equipment has been applied. [0003] In such a plasma device, in order to perform good processing, it is necessary to maintain the state of the plasma in a good state suitable for plasma processing. Therefore, currently, there are many plasma apparatuses equipped with a magnetic field forming mechanism for forming a magnetic field for controlling plasma. [0004] As such a magnetic field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46C23F1/00H01J37/32H01L21/205H01L21/302H01L21/3065H01L21/31
CPCH01J37/32688H01J37/32623H01L21/302
Inventor 小野博夫达下弘一本田昌伸永关一也林大辅
Owner TOKYO ELECTRON LTD