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FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect

A technology of giant magnetoresistance and fexc1-x, which is applied in the field of FexC1-x/Fe/Si multilayer film materials, can solve the problems of a large number of preparation limitations, relatively harsh preparation process requirements, complex structures, etc., and achieve stable process and simple method , the effect of high preparation efficiency

Inactive Publication Date: 2005-03-02
TSINGHUA UNIV
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Problems solved by technology

However, the structure of these materials is relatively complex, and the requirements for the preparation process are relatively strict, so their mass production is limited.

Method used

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  • FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect
  • FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect

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Embodiment Construction

[0008] The present invention is a kind of Fe with laser pulse deposition method x C 1-x / Fe / Si multilayer film material. On the Si(100) substrate 1 there are Fe thin film 2 and Fe x C 1-x Thin film 3 (such as figure 1 shown). The Fe with room temperature positive giant magnetoresistance effect x C 1-x The composition of the film material is the composition of the cold-pressed target material, and its iron content (weight ratio) is 0-20%. In specific implementation, the proportion of the target material used is C, Fe 0.05 C 0.95 , Fe 0.1 C 0.9 Fe 0.2 C 0.8 . Its preparation method is (only with Fe 0.05 C 0.95 Composite cold-pressed target as an example): In the vacuum coating chamber, the laser pulse deposition method is used to deposit Fe thin film and Fe film on Si(100) substrate with constant temperature. x C 1-x film. The specific process is carried out in a vacuum coating chamber: KrF laser (Lambda PhysicsLPX205, 248nm, 25ns FWHM) is deposited in a vacuum ...

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Abstract

The invention provides FexC1-x / Fe / Si multilayer material with low-field room temp. direct magnetic resistance efficiency used for magnetics quantity sensor material. Fe thin film and FexC1-x thin film are formed on Si(100) base board one by one, direct magnetic resistance effeciency of the material can reach 36.6 percent in condition of 100 Oe applied magnetic field.

Description

technical field [0001] The invention belongs to the magnetic quantity sensor material in the information sensing material, in particular to a kind of Fe with giant magnetoresistance effect at low field room temperature x C 1-x / Fe / Si multilayer film material. technical background [0002] There have been many reports on multilayer film materials with giant magnetoresistance effect, such as in Inomata K, Tezuka N, Okamura S, Kurebayashi H, Hirohata A, Journal of applied physics, 2004, 95(11): 7234-7236. Reported Co 2 Cr 1-x Fe x Al(100nm) / AlO x (1.4nm) / CoFe(3nm) / NiFe(5nm) / IrMn(15nm) / Ta(10nm) multilayer film. The multilayer film is prepared under relatively high vacuum conditions by magnetron sputtering. Its giant magnetoresistance effect at room temperature reaches -19%; disclosed in Lucinski T, Hutten A, BrucklH, Heitmann S, Hempel T, Reiss, G.Journal of Magnetism and Magnetic Materials.2004, 269 (1): 78-88. Ni 80 Fe 20 / Col / CuAgAu / Co2 multilayer film, the multilaye...

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Application Information

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IPC IPC(8): H01L43/08H01L43/10
Inventor 章晓中薛庆忠谈国太田鹏
Owner TSINGHUA UNIV