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Magnetic memory device

A technology of magnetic memory and random access memory, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve problems such as the inability to use magnetic memory unit conversion

Inactive Publication Date: 2005-04-20
HEWLETT PACKARD DEV CO LP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this generated heat is easily conducted out of the memory cell through the bit line and cannot be utilized to facilitate the switching of the magnetic memory cell

Method used

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  • Magnetic memory device
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Examples

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Embodiment Construction

[0014] FIG. 1 shows an embodiment of a first magnetic random access memory device (MRAM) of the present invention, here designated by the general reference numeral 100 . MRAM 100 includes many individual magnetoresistive memory cells 102 . In this example, each memory cell 102 is a tunneling magnetoresistive memory (TMR) cell. Each memory cell 102 includes a magnetic reference layer 104 , a medium layer 106 and a magnetic data layer 108 . The device includes conductive word lines 110 and 112, respectively. These word lines are usually made of metal, such as aluminum or copper. Both materials are good conductors of heat.

[0015] The word lines 110 and 112 can dissipate heat from the memory cells fairly efficiently, and any localized heat can be quickly conducted away. However, if a portion of this localized heating is allowed to accumulate at each active memory cell 102, then this heat can be used to make switching the bits of the data layer 108 somewhat easier. Therefore...

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Abstract

A magnetic memory device (100, 200, 300) comprising a magnetic memory cell (102, 202, 302) comprising a magnetic material capable of switching between two resistive states when a magnetic field is applied. The device also includes wires connected to the magnetic memory cells (102, 202, 302), the wires having conductive bridges (114, 214, 311) and conductive word or bit lines (116, 118, 216, 310, 312). Conductive bridges (114, 214, 311) disposed between word or bit lines (116, 118, 216, 310, 312) and magnetic memory cells (102, 202, 302) have a greater thermal resistance than the word or bit lines The thermal resistance of (116, 118, 216, 310, 312) provides a barrier to conduction of heat from the magnetic memory cell (102, 202, 302) to the word or bit line (116, 118, 216, 310, 312).

Description

technical field [0001] The present invention relates to magnetic memory devices, and more particularly, to methods and structures for storing data in magnetic memory devices. Background technique [0002] Nonvolatile magnetic random access memory (MRAM) devices have the potential to replace volatile dynamic random access memory (DRAM) devices and static random access memory (SRAM) devices in certain applications. MRAM devices include cell arrays operating with tunneling magnetoresistance (TMR), large magnetoresistance (CMR), and giant magnetoresistance (GMR) techniques. [0003] MRAM cells are usually constructed on the basis of "data" and "reference" layers. The data layer includes a writable magnetic material, and the reference layer includes a fixed magnetic material. The dielectric layer between the two has a greater or lesser resistance to current flow, depending on whether the magnetic fields from the interlayers cancel or enhance each other. [0004] During a write...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105G11C11/00G11C11/15G11C11/16H01L21/8246H01L27/10H01L43/08
CPCG11C11/16
Inventor T·C·安东尼F·A·佩尔纳H·李
Owner HEWLETT PACKARD DEV CO LP