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Method for etching side wall and method for forming semiconductor structure

A semiconductor and etching technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of reduced size and high integration

Inactive Publication Date: 2005-04-27
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, dry etching is not an ideal method to improve or enhance trench fill

Method used

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  • Method for etching side wall and method for forming semiconductor structure
  • Method for etching side wall and method for forming semiconductor structure
  • Method for etching side wall and method for forming semiconductor structure

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Embodiment Construction

[0052] The following provides several embodiments together with the accompanying drawings to illustrate the method provided by the present invention.

[0053] As mentioned above, in the manufacturing method of the semiconductor structure, trenches or gaps, such as shallow trench isolation regions, are usually defined and formed in the substrate. Grooves described in this embodiment include notches, inlines, holes, and other similar forms of formations. Therefore, grooves, notches, interconnects, holes, or other similar structures formed in the substrate can also be applied to the method provided in the present invention.

[0054] The material of the provided substrate is, for example, silicon or any other dielectric material, and the trenches are filled with another different material, such as any other dielectric material, polysilicon, or metal. In the step of filling the trenches, the material filled in the trenches generally accumulates on the sidewalls and openings of the...

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Abstract

The present invention provides side wall etching process and semiconductor structure forming process. The side wall etching process includes providing one substrate with channels, which are filled with stuffing in the opening, side wall and bottom; and then eliminating the stuffing in the opening and the side wall while leaving the stuffing in the bottom of the channels through the reaction between anti-etching agent and the stuffing in the bottom of the channels. During the reaction, the stuffing in the bottom of the channels produces bubble by means of turning the substrate and soaking in the etching agent. The said process removes the matter to close the channels while maintaining the matter in the bottom of channels to fill the channels.

Description

technical field [0001] The present invention relates to a semiconductor preparation process, in particular to a method for etching sidewalls, an etching method in the step of filling trenches, and a method for forming on a substrate with trenches by a shallow trench isolation preparation process. Methods for semiconductor structures. Background technique [0002] During the fabrication of semiconductor devices, the integrated circuit structure usually exists in a multi-layer structure. First on the substrate layer, transistor devices with diffusion regions are formed on the silicon substrate; in other layers formed later, interconnected metal lines are patterned and electrically connected to the transistor devices to define the desired Functional devices, and the patterned conductive layer is isolated from other conductive layers by dielectric materials such as silicon dioxide. These dielectric materials basically constitute the insulating layer and the base layer of the m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/16H01L21/306H01L21/311H01L21/3213H01L21/76
Inventor 刘裕腾
Owner MACRONIX INT CO LTD