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Method of manufacturing electron-emitting device, electron source, and image display device

一种图像显示装置、电子发射的技术，应用在放电管/灯的制造、电气元件、电极系统制造等方向，能够解决元件电子发射特性降低、元件破坏等问题

Inactive Publication Date: 2005-07-27
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Especially under high electric field, due to abnormal discharge, the electron emission characteristics of the element are significantly reduced, and in the worst case, the element is destroyed

Method used

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  • Method of manufacturing electron-emitting device, electron source, and image display device
  • Method of manufacturing electron-emitting device, electron source, and image display device
  • Method of manufacturing electron-emitting device, electron source, and image display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] A PD200 (glass substrate) used in a plasma display was used as a substrate, and Pt with a film thickness of 0.5 μm was deposited by sputtering and photolithography to form a plurality of electrode pairs. After that, use Ag-based photosensitive paste to form a film by screen printing, dry it at a temperature of about 100°C, expose it using a mask, perform a wet development process, and sinter it at a weak temperature of 500°C to make a film thicker. Column wiring around 8μm. In addition, using a PbO-based (lead glass) photosensitive paste, the same method as the above-mentioned column wiring process was performed three times to form a film / dry / exposure / development / sintering process, and finally an insulating layer with a film thickness of about 30 μm was obtained. In addition, row wiring is formed on the insulating layer by Ag-based screen printing method and sintering at about 430°C. Thereafter, a Pd-based organic solvent was discharged by an inkjet method to form an i...

Embodiment 2

[0086] As in Example 1, after forming a plurality of electrode pairs, wiring lines, and a conductive film on a glass substrate, an antistatic film was formed on the entire substrate when the conductive film remained. The antistatic film is to be made on the SnO x A solution in which microparticles doped with antimony and the like are dispersed in a mixture of isopropanol (IPA) and ethanol is applied by sputtering, dried and sintered at 250°C.

[0087] Thereafter, in the same manner as in Example 1, the cleaning process was performed while changing the hydraulic pressure, and the effect of foreign matter removal was confirmed. The method of confirmation is to compare with the method of counting the number of foreign substances larger than about 1 μm with an electron microscope. The results are shown in Figure 7 . Figure 7 The vertical axis of is the number of foreign matter per unit area. Compared with the case where the cleaning process is not performed, when the cleanin...

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Abstract

A method of manufacturing an electron-emitting device, an electron source and an image display device is provided. In a method of manufacturing an electron-emitting device, an electroconductive film formed on a substrate is subjected to a clean processing to remove a foreign matter from the electroconductive film, and thereafter, energization is conducted on the electroconductive film, to form an electron-emitting region. Accordingly, there is provided an electron-emitting device which avoids a formation defect of the electron-emitting region due to the existence of the foreign matter and which has satisfactory characteristics without fluctuation.

Description

technical field [0001] The present invention relates to a method of manufacturing an electron emission element, and also to a method of manufacturing an electron source having a plurality of the element, and a method of manufacturing an image display device using the electron source and an image forming member. Background technique [0002] In recent years, image display devices in which self-luminous electron-emitting elements are arranged in a matrix on a backplane have been proposed. Electron emission elements known so far can be roughly classified into two types, those using thermionic electron emission elements and those using cold cathode emission elements. There are field emission type (hereinafter referred to as "FE type"), metal / insulator / metal type (hereinafter referred to as "MIM type"), and surface conduction type emission elements among cold cathode electron emission elements. [0003] Currently, in a surface conduction type electron emission device, generally,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/30H01J9/02
CPCH01J9/027A46B13/02A46B5/0095A46B2200/106
Inventor 宇田芳己柳泽芳浩石渡和也
Owner CANON KK
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