Process and system for heating semiconductor substrates in a processing chamber containing a susceptor

Abstract

A process and system for heating semiconductor substrates in a processing chamber on a susceptor as disclosed. In accordance with the present invention, the susceptor includes a support structure made from a material having a relatively low thermal conductivity for suspending the wafer over the susceptor. The support structure has a particular height that inhibits or prevents radial temperature gradients from forming in the wafer during high temperature processing. If needed, recesses can be formed in the susceptor for locating and positioning a support structure. The susceptor can include a wafer supporting surface defining a pocket that has a shape configured to conform to the shape of a wafer during a heat cycle.

Description

Background technique [0001] During the manufacture of integrated circuits and other electronic devices, semiconductor wafers are typically placed in thermal processing chambers and heated. During heating, various chemical and physical processes may take place. For example, during a heating cycle, a semiconductor wafer can be annealed, or various coatings and films can be deposited on the wafer. [0002] One way to heat a wafer in a processing chamber, especially during an epitaxial process, is to place the wafer on a heated susceptor. The susceptor can be heated using, for example, an inductive heating device or a resistive heater. In many systems that include a susceptor, the process chamber walls are maintained at a lower temperature than the susceptor so as to avoid any deposition on the walls and thus any unwanted particulates or contamination during the heating process. These types of process chambers are called "cold wall chambers" and operate in thermal non-equilibri...

AI Technical Summary

Problems solved by technology

However, wafers with larger diameters tend to develop larger radial temperature gradients and thus more slip

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