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Method for forming metal bump on semiconductor wafer and semiconductor wafer device having the same

A technology of metal bumps and semiconductors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., to achieve the effect of improving electrical connectivity and simplifying the packaging process

Inactive Publication Date: 2005-09-07
沈育浓
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the material of the bonding pad of the semiconductor chip is aluminum. Based on the problem of co-metallicity, how to improve the conductive connection between the conductive adhesive and the bonding pad of the chip has become an urgent topic.

Method used

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  • Method for forming metal bump on semiconductor wafer and semiconductor wafer device having the same
  • Method for forming metal bump on semiconductor wafer and semiconductor wafer device having the same
  • Method for forming metal bump on semiconductor wafer and semiconductor wafer device having the same

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Embodiment Construction

[0034] Before the present invention is described in detail, it should be noted that throughout the description, the same elements are designated by the same reference numerals.

[0035] see Figure 1 to Figure 6 As shown, the flow of the method for forming metal bumps on a semiconductor wafer according to the first preferred embodiment of the present invention is shown.

[0036] as in figure 1 As shown in, first, a semiconductor wafer 1 is provided. The semiconductor chip 1 has a bonding pad mounting surface 10 and a plurality of bonding pads 11 (only one bonding pad is shown in the drawing) mounted on the bonding pad mounting surface 10 .

[0037] It should be noted that the semiconductor wafer 1 may be a wafer that has been cut from a wafer, or may be a wafer that has not been cut from a wafer.

[0038] Next, see figure 2 As shown, a photosensitive film layer 2 is formed on the pad mounting surface 10 of the wafer 1 . After that, a photomask 3 covering the portion of t...

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PUM

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Abstract

The invention discloses a method for forming metallic raised block on a semiconductor wafer and a semiconductor wafer device with the metallic raised block, and the method comprises the steps as follows: providing a semiconductor wafer with a pad installation surface and several pads installed on the pad installation surface; forming a photosensitive film layer on the pad installation surface; with a shade, exposing the photosensitive film layer to form pad exposing holes in it; forming a conductive connector in the pad in each pad exposing hole; forming conductive material on each conductive connector; forming a metal cover on the conductive material; and removing the photosensitive film layer. The invention can enhance the property of connection between external circuit and pad of the wafer and simplifies the packaging process of the semiconductor wafer.

Description

【Technical field】 [0001] The present invention relates to a method of forming metal bumps, and more particularly, to a method of forming metal bumps on a semiconductor wafer and a semiconductor wafer device having the metal bumps thus formed. 【Background technique】 [0002] For reasons of environmental protection, conductive adhesives have been gradually used instead of tium materials in the semiconductor manufacturing process. However, the material of the pads of the semiconductor chip is currently aluminum. Based on the problem of co-alloying, the research on how to improve the conductive connection between the conductive adhesive and the pads of the chip has become an urgent topic. [Content of the invention] [0003] In view of this, an object of the present invention is to provide a method for forming metal bumps on a semiconductor wafer and a semiconductor wafer device having the metal bumps thus formed, which can improve the electrical connectivity between the extern...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/60H01L21/768H01L23/48
CPCH01L2224/10
Inventor 沈育浓
Owner 沈育浓
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