Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface texture structure and a minimized and localized lattice constant and thermal expansion factor mismatching method

A surface texture and device technology, applied in the field of semiconductor optoelectronics, can solve the problems of lack of mismatch effects and other problems

Inactive Publication Date: 2005-09-21
金芃
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition to the literature on buffer layers, there is a lack of literature on methods to localize and minimize the effects of mismatches in lattice constants and thermal expansion coefficients

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface texture structure and a minimized and localized lattice constant and thermal expansion factor mismatching method
  • Surface texture structure and a minimized and localized lattice constant and thermal expansion factor mismatching method
  • Surface texture structure and a minimized and localized lattice constant and thermal expansion factor mismatching method

Examples

Experimental program
Comparison scheme
Effect test

example

[0032] (1) The epitaxial layer in the present invention includes, but not limited to, an N-type confinement layer, a P-type confinement layer, and a light-emitting layer;

[0033] (2) The growth substrate in the present invention includes a luminescent growth substrate and a non-luminescent growth substrate;

[0034] (3) The "buffer layer" of the present invention includes a single-layer buffer layer and a multi-layer buffer layer.

[0035] Figure 1a shows a cross-sectional view of a previous thicker growth substrate and the epitaxial layer thereon. The buffer layer 12 is grown on the upper surface of the growth substrate 11 , and the epitaxial layer 13 is grown on the upper surface of the buffer layer 12 . A force 14 generated by the mismatch of the lattice constant and the thermal expansion coefficient exists at and parallel to the interface between the buffer layer 12 and the growth substrate 11 . Before grinding thinning, the growth substrate 11 is sufficiently thick tha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention refers to a method for solving the problem of mismatching of lattice constant and heat expansion coefficient, which contains 1, preparing superficial makings structure on growth substrate for growing high quality epitaxial layer, 2, preparing superficial makings on said epitaxial layer for growing high quality second epitaxial layer, 3, a method for localizing and minimizing the bad effect resulting from mismatching of lattice constant and heat expansion coefficient, the process of preparing superficial makings can be repeated many times, the semiconductor LED with multi-epitaxial layer can emit white or preset color composite light.

Description

technical field [0001] The invention relates to a high-quality, low dislocation and distortion density, monochromatic or white light semiconductor light-emitting diode chip and a production method thereof, belonging to the technical field of semiconductor optoelectronics. Background technique [0002] The present invention relates to the preparation of surface texture structures on the surface of growth substrates and epitaxial layers of semiconductor light-emitting diodes, and a method of localizing and minimizing dislocation and distortion effects due to mismatches of lattice constants and thermal expansion coefficients . [0003] The lattice constant and thermal expansion coefficient of the epitaxial layer in the semiconductor chip should match the lattice constant and thermal expansion coefficient of the growth substrate, and the closer the better. The effect of lattice constant mismatch can be mediated by coherent strain and other mechanisms, such as bending epitaxial ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/08H01L33/20
Inventor 彭晖
Owner 金芃
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com