Semiconductor circuit and method of fabrication

Abstract

A semiconductor circuit comprises a semiconductor substrate, a semiconductor device having a drain region disposed in the substrate, and a reverse doped region laterally adjacent and laterally contacting the drain region wherein the reverse doped region has an opposite doping type from that of drain region and a dopant concentration higher than that of the semiconductor substrate, the reverse doped region and the drain operable to form a p-n junction.

Description

technical field [0001] The invention relates to a semiconductor circuit and a manufacturing method thereof, in particular to a semiconductor circuit with an electrostatic protection structure and a manufacturing method thereof. Background technique [0002] A semiconductor integrated circuit connected to an external port is vulnerable to electrostatic discharge in the external environment. Electrostatic discharge usually occurs when charge is rapidly transferred between one or more pins of the integrated circuit and an external object. As the size of integrated circuits shrinks, so does the chance of electrostatic discharge harming the circuit. ESD protection circuits can be used to dissipate electrostatic energy to protect sensitive core integrated circuits. [0003] However, various current ESD protection circuits are not enough to protect high-sensitivity core circuits with small pattern features, so some additional processes are required, which reduces the cost-effectiv...

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