Check patentability & draft patents in minutes with Patsnap Eureka AI!

Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging

An electrostatic chuck and wafer technology, applied in circuits, electrical components, gaseous chemical plating, etc., can solve problems such as the deterioration of edge cooling problems, failure to provide wafer mechanical devices, etc.

Inactive Publication Date: 2005-12-07
AXCELIS TECHNOLOGIES
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to achieve the above effect, an edge of about 1mm is required to be close to both sides of the wafer, which in turn exacerbates the edge cooling problem
Finally, the prior art fails to provide a mechanism for preventing the wafer from falling into the chamber when the electrostatic chuck fails during processing of the wafer in an upside-down orientation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging
  • Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging
  • Electrostatic chuck wafer port and top plate with edge shielding and gas scavenging

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] first reference figure 1 , illustrates an apparatus for processing a semiconductor wafer according to an exemplary embodiment of the present invention. The apparatus includes a wafer port flange 2 and a top plate 4, both of which may be placed within a high vacuum chamber, generally indicated by numeral 1 . The high vacuum chamber 1 provides a controlled environment for processing semiconductor wafers and may have an internal pressure of less than 1 Torr.

[0016] The wafer port flange 2 includes an electrostatic chuck 6 which is used to support a semiconductor wafer 10 for processing within the high vacuum chamber 1 . Although not shown, electrostatic chuck 6 may further include a temperature-controlled base member, an insulator layer, a dielectric layer, and a pair of electrodes, such as those described in commonly assigned U.S. Patent No. 5,436,790 to Blake et al. Chuck, which is incorporated herein by reference for descriptions of commonly used electrostatic chuck...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An apparatus for processing a semiconductor wafer. The apparatus according to the present invention comprises a wafer port flange including an electrostatic chuck and a top plate including a lip. The electrostatic chuck defines a circumferential gas distribution groove and a gas gap positioned between a backside of a semiconductor wafer and the electrostatic chuck. The lip is positioned to shield an outside band of the wafer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Description

technical field [0001] The present invention relates generally to equipment used in the preparation of semiconductor wafers, and more particularly, to an electrostatic chuck wafer port and top plate that provides edge shielding of the wafer from exposure to an energy source and gassing of a cooling gas source Cleared, this source of cooling gas is used to maintain a uniform wafer temperature. Background technique [0002] Typically, in high vacuum systems for processing semiconductor wafers, an energy source heats the wafer. For example, in an ion implanter, a high energy ion beam delivers energy (along with ions) to the wafer, which raises the temperature of the wafer as the energy from the ion beam is converted into heat. To control the temperature of the wafer, backside cooling air is often introduced into pressure distribution slots provided on the electrostatic chuck adjacent to the wafer. The electrostatic chuck supports the wafer during processing. The cooling gas ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00
CPCH01L21/67109C23C16/00H01L21/00H01L21/02H01L21/68
Inventor P·L·凯勒曼K·T·赖安R·J·米切尔
Owner AXCELIS TECHNOLOGIES
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com