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Solid-state imaging device and method for manufacturing the same

A technology of a solid-state imaging device and a manufacturing method, which can be applied to radiation control devices, image communication, electric solid-state devices, etc., and can solve problems such as incomplete charge transfer and low transfer efficiency.

Inactive Publication Date: 2006-01-04
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This potential barrier makes the charge trapped during the charge transfer, which leads to incomplete charge transfer, which means the problem of low transfer efficiency

Method used

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  • Solid-state imaging device and method for manufacturing the same
  • Solid-state imaging device and method for manufacturing the same
  • Solid-state imaging device and method for manufacturing the same

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Experimental program
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Embodiment 1

[0060] The solid-state imaging device and its manufacturing method according to Embodiment 1 of the present invention will be described below with reference to the drawings. Note here that the arrangement of the transfer gate electrode in the solid-state imaging device according to Embodiment 1 is the same as Figure 11 The layout of the transmission grid electrodes in the shown common solid-state imaging device is similar, so in Embodiment 1, reference is also made to Figure 11 . Figure 11 is for showing the arrangement of the first transfer gate electrode 10 and the second transfer gate electrode 11 over the substrate 1, and thus other elements other than these are not shown.

[0061] figure 1 is to show the solid-state imaging device according to Embodiment 1 of the present invention along Figure 11 A cross-sectional view taken along the line A-A. figure 2 is to show the solid-state imaging device according to Embodiment 1 of the present invention along Figure 11 Anot...

Embodiment 2

[0085] A solid-state imaging device and a manufacturing method thereof according to Embodiment 2 of the present invention will be described below with reference to the drawings. Note here that the arrangement of the transfer gate electrode in the solid-state imaging device according to Embodiment 2 is the same as Figure 11 The layout of the transfer grid electrodes in the common solid-state imaging device shown is similar, so in Embodiment 2, reference is also made to Figure 11 . Figure 11 is for showing the arrangement of the first transfer gate electrode 10 and the second transfer gate electrode 11 over the substrate 1, and thus other elements other than these are not shown.

[0086] Figure 4 is to show the solid-state imaging device according to Embodiment 2 of the present invention along Figure 11 A cross-sectional view of the structure taken by the line A-A. Figure 5 is to show the solid-state imaging device according to Embodiment 2 of the present invention along ...

Embodiment 3

[0107]A solid-state imaging device and a manufacturing method thereof according to Embodiment 3 of the present invention will be described below with reference to the drawings. Note here that the arrangement of the transfer gate electrode in the solid-state imaging device according to Embodiment 3 is the same as Figure 11 The layout of the transfer grid electrodes in the shown common solid-state imaging device is similar, so in Embodiment 3, reference is also made to Figure 11 . Figure 11 is for showing the arrangement of the first transfer gate electrode 10 and the second transfer gate electrode 11 over the substrate 1, and thus other elements other than these are not shown.

[0108] Figure 7 is to show the solid-state imaging device according to Embodiment 3 of the present invention along Figure 11 A cross-sectional view of the structure taken by the line A-A. Figure 8 is to show the solid-state imaging device according to Embodiment 3 of the present invention along F...

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PUM

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Abstract

A solid-state imaging device is provided, including: a semiconductor substrate; a photoelectric conversion portion formed in the semiconductor substrate; a gate insulation film formed on the semiconductor substrate so as to cover the photoelectric conversion portion; and a plurality of transfer gate electrodes that transfer charges generated at the photoelectric conversion portion in a vertical direction, the plurality of transfer gate electrodes being formed on the gate insulation film and being mutually insulated by silicon oxide films. The plurality of transfer gate electrodes include an impurity-doped amorphous silicon film or a poly-silicon film, and the gate insulation film has a multilayer configuration including a layer made of a material more resistant to oxidizing than silicon nitride, or has a single-layer configuration made of a material more resistant to oxidizing than silicon nitride.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a manufacturing method thereof. Background of the invention [0002] Various solid-state imaging devices have conventionally been proposed. For example, JPH09(1997)-283733A discloses a conventional solid-state imaging device. A conventional solid-state imaging device will be described below with reference to the drawings. Figure 11 is a plan view for explaining the arrangement of transfer gate electrodes in a general solid-state imaging device. notice here Figure 11 It is used to show the arrangement of the first transfer gate electrode 110 and the second transfer gate electrode 111 on the substrate 101, so other elements other than these elements are not shown. Figure 12 is shown along the Figure 11 A cross-sectional view of the structure of a conventional solid-state imaging device taken along line A-A of . Figure 13 is shown along the Figure 11 Another cross-sectional view of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/335H01L27/148H01L31/062H01L31/103H04N25/00
CPCH01L27/14806H01L31/103H01L27/146
Inventor 岩脇直树
Owner PANASONIC CORP