Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Laser processing method

A laser processing method and pulsed laser technology, which are used in laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems that laser grooves cannot be effectively formed, and the laser beam cannot be set at the bottom of the laser grooves.

Inactive Publication Date: 2006-02-15
DISCO CORP
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, a problem is caused in that the laser beam applied next time is blocked or the focused spot of the laser beam cannot be set at the bottom of the laser groove, so that the laser groove having a predetermined depth cannot be effectively formed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser processing method
  • Laser processing method
  • Laser processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The laser processing method of the present invention will be described in detail below with reference to the accompanying drawings.

[0028] figure 1 is a perspective view of a semiconductor wafer as a workpiece to be processed by the laser processing method of the present invention. in such as figure 1 In the shown semiconductor wafer 2, a plurality of regions are divided by a plurality of dividing lines 21 provided in a grid pattern on a front surface 20a of a semiconductor substrate 20 such as a GaAs substrate, and in A device 22 such as an IC or LSI is formed in each divided area. The rear surface of the thus constituted semiconductor wafer 2 is placed on the protective tape 4 mounted on the ring frame 3 in such a manner that the front surface 2a, that is, the surface on which the dividing lines 21 and devices 22 are formed, faces upward. .

[0029] Figure 2 to Figure 4 A laser beam processing apparatus for carrying out the laser processing method of the prese...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.

Description

field of invention [0001] The present invention relates to a method of performing laser processing along dividing lines called "streets" formed on a workpiece such as a semiconductor wafer. Background technique [0002] In the production process of semiconductor devices, a plurality of regions are divided by dividing lines called "streets" provided in a grid pattern on the front surface of a substantially disk-shaped semiconductor wafer, and each divided Circuits (functional elements) such as ICs or LSIs are formed in the area. Individual semiconductor chips are manufactured by dicing the semiconductor wafer along dividing lines so as to divide it into regions on which circuits are formed. It is also possible to cut an optical device wafer including a light-receiving element (a plurality of functional elements) such as a photodiode or a light-emitting element (a plurality of functional elements) such as a laser diode laminated on the front surface of a sapphire substrate al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/36B23K26/06B23K26/08B23K26/073B23K26/364B23K26/38B23K26/40B23K101/40H01L21/301
CPCB23K26/367B23K26/0736B23K26/063H01L21/78B23K26/4075B23K26/40B23K26/0622B23K26/364B23K2103/50
Inventor 大庭龙吾古田健次星野仁志北原信康武田升
Owner DISCO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com