Laser processing method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DISCO CORP
- Publication Date
- 2006-02-15
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
field of invention
[0001] The present invention relates to a method of performing laser processing along dividing lines called "streets" formed on a workpiece such as a semiconductor wafer. Background technique
[0002] In the production process of semiconductor devices, a plurality of regions are divided by dividing lines called "streets" provided in a grid pattern on the front surface of a substantially disk-shaped semiconductor wafer, and each divided Circuits (functional elements) such as ICs or LSIs are formed in the area. Individual semiconductor chips are manufactured by dicing the semiconductor wafer along dividing lines so as to divide it into regions on which circuits are formed. It is also possible to cut an optical device wafer including a light-receiving element (a plurality of functional elements) such as a photodiode or a light-emitting element (a plurality of functional elements) such as a laser diode laminated on the front surface of a sapphire substrate al...