Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it

A giant magnetoresistance element and magnetic technology, applied in the field of giant magnetoresistance effect elements, magnetic components and magnetic devices, can solve the problem of small resistance change ΔR and magnetoresistance change rate, small current path of CPP-GMR element, and hindrance of CPP-GMR Issues such as component availability
CN1771613AInactive Publication Date: 2006-05-10JAPAN SCI & TECH CORP
3 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
JAPAN SCI & TECH CORP
Publication Date
2006-05-10
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

CPP-type giant magnetoresistance elements, magnetic components and magnetic devices can exhibit giant magnetoresistance effects through spin-related currents in the vertical direction of the film surface, wherein the CPP-type giant magnetoresistance elements (10, 20, 50) have antiferromagnetic layers (9), laminated structure of ferromagnetic fixed layer (11, 11A), non-magnetic conductive layer (12) and ferromagnetic free layer (13, 13A), the first magnetic layer of ferromagnetic free layer (13, 13A) (14, 14A) and the second magnetic layer (16, 16A) are magnetically antiparallel coupled through a magnetic coupler (15, 15A), and the magnetization (17, 17') of the first magnetic layer (14, 14A) is connected to the first magnetic layer (14, 14A). 2 Magnetizations (18, 18A) of the magnetic layers (16, 16A) are different in magnitude. Up-spinning electrons (5) and down-spinning electrons (6) are spin-dependently scattered according to the magnetization directions of the ferromagnetic pinned layer (11, 11A) and the ferromagnetic free layer (13, 13A), and the CPP-GMR passes through the conduction channel (1 , 2, 3, 4) and increase. In addition, in the CPP type giant magnetoresistance element (30) with ferromagnetic pinned layer (11), nonmagnetic conductive layer (12) and ferromagnetic free layer (13A), between ferromagnetic pinned layer (11) and nonmagnetic Between the conductive layers (12) and / or on the surface of the ferromagnetic free layer (13A), a layer (21) formed of one or not less than two of ruthenium, iridium, rhodium, rhenium, and chromium is provided.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a giant magnetoresistance effect element (hereinafter referred to as a CPP type giant magnetoresistance effect element) and a magnetic component and a magnetic device using the giant magnetoresistance effect element, which can exhibit giant magnetoresistance through a spin-related current in a vertical direction of the film surface effect. Background technique

[0002] In recent years, a giant magnetoresistance (GMR) effect element composed of a ferromagnetic layer / nonmagnetic metal layer / ferromagnetic layer is being developed. GMR is caused by spin-dependent scattering at the interface, and the magnetization of the two ferromagnetic layers is controlled to be parallel or antiparallel to each other by an external magnetic field, so that their resistances are different from each other.

[0003] GMR elements have been applied to magnetic sensors, reproduction heads of hard disk devices, and the like. In this case, the current f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More