Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it

Abstract

CPP-type giant magnetoresistance elements, magnetic components and magnetic devices can exhibit giant magnetoresistance effects through spin-related currents in the vertical direction of the film surface, wherein the CPP-type giant magnetoresistance elements (10, 20, 50) have antiferromagnetic layers (9), laminated structure of ferromagnetic fixed layer (11, 11A), non-magnetic conductive layer (12) and ferromagnetic free layer (13, 13A), the first magnetic layer of ferromagnetic free layer (13, 13A) (14, 14A) and the second magnetic layer (16, 16A) are magnetically antiparallel coupled through a magnetic coupler (15, 15A), and the magnetization (17, 17') of the first magnetic layer (14, 14A) is connected to the first magnetic layer (14, 14A). 2 Magnetizations (18, 18A) of the magnetic layers (16, 16A) are different in magnitude. Up-spinning electrons (5) and down-spinning electrons (6) are spin-dependently scattered according to the magnetization directions of the ferromagnetic pinned layer (11, 11A) and the ferromagnetic free layer (13, 13A), and the CPP-GMR passes through the conduction channel (1 , 2, 3, 4) and increase. In addition, in the CPP type giant magnetoresistance element (30) with ferromagnetic pinned layer (11), nonmagnetic conductive layer (12) and ferromagnetic free layer (13A), between ferromagnetic pinned layer (11) and nonmagnetic Between the conductive layers (12) and / or on the surface of the ferromagnetic free layer (13A), a layer (21) formed of one or not less than two of ruthenium, iridium, rhodium, rhenium, and chromium is provided.

Description

technical field [0001] The invention relates to a giant magnetoresistance effect element (hereinafter referred to as a CPP type giant magnetoresistance effect element) and a magnetic component and a magnetic device using the giant magnetoresistance effect element, which can exhibit giant magnetoresistance through a spin-related current in a vertical direction of the film surface effect. Background technique [0002] In recent years, a giant magnetoresistance (GMR) effect element composed of a ferromagnetic layer / nonmagnetic metal layer / ferromagnetic layer is being developed. GMR is caused by spin-dependent scattering at the interface, and the magnetization of the two ferromagnetic layers is controlled to be parallel or antiparallel to each other by an external magnetic field, so that their resistances are different from each other. [0003] GMR elements have been applied to magnetic sensors, reproduction heads of hard disk devices, and the like. In this case, the current f...

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Problems solved by technology

[0007] However, the CPP-GMR element has not been put into practical use because the current path is small and the resistance is small, the element size is not quite small, and it is not practical.

[0008] Also discussed in CPP-GMR elements such as Figure 10 As shown, the antiferromagnetic layer 81 is close to the spin valve type of the ferromagnetic pinned layer 82, but compared with the GMR film composed of the ferromagnetic free layer 84 / nonmagnetic conductive layer 83 / ferromagnetic pinned layer 82, the antiferromagnetic layer The resistance of 81 is large, so the resistance change rate of the rotary valve element is generally less than 1%, and the resistance change ΔR is also small, which is also the main factor hindering the practicability of the CPP-GMR element

[0009] As mentioned above, in the conventional rotary valve type CPP-GMR element, the resistance change ΔR and the magnetoresistance change rate are small, which poses a practical problem

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