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Thin film processing method and system

A thin-film processing and thin-film technology, applied in the field of thin-film processing methods and thin-film processing systems, can solve the problems that ultraviolet rays are difficult to penetrate into the thin film, and the electric charge cannot be removed.

Inactive Publication Date: 2006-07-26
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When using the method of Patent Document 2, since ultraviolet rays are used, the charges on the surface of the film can be removed, but the charges generated by ultraviolet rays do not penetrate into the inside of the film, but the charges on the surface of the film can only be removed, and the charges accumulated inside cannot be removed.
However, when the method of Patent Document 3 is adopted, there is still a problem that ultraviolet rays are difficult to penetrate into the film.

Method used

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  • Thin film processing method and system
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  • Thin film processing method and system

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Embodiment Construction

[0036] Below, according to Figure 1 to Figure 8 The illustrated embodiments illustrate the invention.

[0037] For example, if image 3 As shown, the thin film processing system S of the present embodiment includes: a spin coating device (spin coater) 10 for coating an SOD film material on the surface of an object to be processed (for example, a wafer); The downstream side of the device 10 and the baking furnace 20 that heat-treats the SOD film formed on the wafer; The film thickness measuring device 30 that is configured on the downstream side of the baking furnace 20 and measures the film thickness of the SOD film after heat treatment; On the downstream side of the thickness measuring device 30 , an electron beam processing device (EB device) 40 that irradiates an electron beam onto the SOD film based on the measurement result of the film thickness measuring device 30 . As the spin coater 10, the baking oven 20, and the film thickness measuring device 30 used at this time...

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PUM

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Abstract

Disclosed is a film- forming method. In the current film-forming process of the resist film and the layer insulation film, the film thickness is hard to be adjusted evenly. For instance, if a SOD film is coated by a revolver, as shown in graph 9 (a), the film thickness of the SOD film is uneven and the state is kept intact and reserved. The film- forming method of the invention is that while electron beams B from a first, a second and a third electron- beam tubes (43A, 43B, 43C) are irradiated on a SOD film which is formed on the wafers W, according to the distribution of the film thickness as shown in graph 6 (a), the respective output of the first, the second and the third electron- beam tubes (43A, 43B, 43C) in each block shown in graph 6 (b) is controlled and the dose amount can be changed.

Description

[0001] This application is a divisional application of a patent application with an application date of December 23, 2003, an application number of 200310123023.3, and an invention title of "thin film processing method and film processing system". technical field [0002] The present invention relates to a thin film processing method and a thin film processing system, in particular to a thin film processing method and a thin film processing system capable of performing thin film processing with a uniform film thickness, or removing charged charges on the film by a plasma processing device. Background technique [0003] With the high integration and high speed of semiconductor devices, the miniaturization of the wiring structure, the high precision of the wiring pattern of the resist film and the reduction of the capacitance between the wirings are becoming more and more important. That is, the higher the fineness of the wiring pattern, the more uniform the thickness of the re...

Claims

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Application Information

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IPC IPC(8): H01L21/263H01L21/00C23C16/517B05D3/06
Inventor 大西正滨学本多稔光冈一行岩下光秋
Owner TOKYO ELECTRON LTD