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Abrasive particles, polishing slurry, and producing method thereof

A technology of abrasive particles and polishing slurry, which is applied in the direction of polishing compositions containing abrasives, nanostructure manufacturing, chemical instruments and methods, etc., and can solve the problems of lack of types of abrasive particles and characteristic cerium oxide particles, etc.

Active Publication Date: 2006-08-16
K C TECH +1
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  • Abstract
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Problems solved by technology

[0008] However, the above-mentioned prior art only discloses the average particle size and range of the abrasive grains constituting the polishing slurry, but lacks the types and characteristics of the raw materials of the abrasive grains, the calcination process involving these characteristics, and the carbon dioxide obtained in this way. Characteristics and other details of cerium particles

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  • Abrasive particles, polishing slurry, and producing method thereof
  • Abrasive particles, polishing slurry, and producing method thereof
  • Abrasive particles, polishing slurry, and producing method thereof

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Embodiment Construction

[0041] The preparation method of the polishing slurry in the present invention and the analysis of the properties of the polishing slurry will be described in detail below. Specifically, changes in polishing slurry properties will be analyzed separately when the size of raw material agglomerates changes and when a multi-step calcination process is introduced. In addition, the present invention will also illustrate the preparation method of polishing slurry using cerium oxide as polishing particles, and the method of using deionized water and anionic polymer as dispersant. Also, CMP results depending on production process conditions, such as oxide film polishing speed and selectivity, will be given. Any person skilled in the art can use the structures and technical contents disclosed below to make some changes or modify them into equivalent embodiments with equivalent changes, and the scope of the present invention is not limited to the following descriptions.

[0042] [Manufa...

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Abstract

Disclosed in the invention is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 mum or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.

Description

technical field [0001] The present invention relates to a slurry used in chemical mechanical polishing (hereinafter referred to as "CMP") process. Particularly relate to a kind of polishing slurry that is used for shallow trench isolation (STI, shallow trench isolatein) CMP process, this polishing slurry is the D-RAM ultra-high integrated semiconductor of making 256M (mega) or higher (design standard is less than or equal to 0.13 μm), which can polish wafers at a high removal rate, and the polishing slurry has excellent oxide removal selectivity compared to nitride. In addition, the present invention also relates to abrasive grains, and methods for producing the abrasive grains and polishing slurry. Background technique [0002] Chemical Mechanical Polishing (CMP) is a semiconductor processing technique that uses abrasive particles between the wafer and polishing pad for mechanical processing and slurry for chemical etching. This method has been successfully developed by t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09C1/68C09C3/00H01L21/304
CPCB82B3/00B82Y40/00C09G1/02C09K3/1454H01L21/304H01L21/30625H01L21/3212
Inventor 金大亨洪锡敏金容国金东炫徐明源朴在勤白云揆
Owner K C TECH
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