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Semiconductor device and method of manufacturing the same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, to achieve the effect of improving reliability

Inactive Publication Date: 2006-08-16
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, poor filling of via metal will result

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0028] The invention will now be described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments described for explanatory purposed.

[0029] Figure 1A is a sectional view showing the interconnection structure according to the present embodiment.

[0030] Figure 1A Semiconductor devices shown include:

[0031] semiconductor substrate;

[0032] an insulating layer having a recess and located on the semiconductor substrate;

[0033] a metal layer comprising copper and embedded in said concave (trench) portion; and

[0034] a metal cap covering the upper part of the metal film, wherein

[0035] At least an upper portion of the metal cap is nitrided.

[0036] The insulating layer has a multilayer structure including a first insulating layer and a second insulating film on an upper p...

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Abstract

A nitrided metal cap film 35 is provided in the upper portion of the metal cap 34 including CoWP. The metal cap 34 and the nitrided metal cap film 35 can be, for example, 1 nm to 100 nm in layer thickness. A ratio of the layer thickness of the nitrided metal cap layer 35 to that of the metal cap 34 can be, for example, 0.1 to 1. Moreover, an SiOCN layer 16 obtained by nitriding the surface of an SiOC layer 14 a is formed on the SiOC layer 14a. The SiOCN layer 16 is a layer including a region in which nitrogen is segregated on the surface, and can be, for example, 1 nm to 100 nm in thickness.

Description

[0001] This application is based on Japanese Patent Application No. 2005-035162, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a structure of a semiconductor device and a method of manufacturing the semiconductor device, and in particular to a copper interconnection line having a metal cap film on the surface. Background technique [0003] Recently, copper is more widely used as an interconnect material in cases where higher-speed semiconductor devices are required. Copper has lower resistance and lower capacitance than the aluminum interconnects that have been used until now, and is superior in resistance to electromigration and stress migration. On the other hand, copper has a characteristic of being easily oxidized even in an atmosphere containing oxygen at a low temperature of 150°C. Therefore, a technique of coating a copper surface with an oxidation barrier film is generally used in a process of f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/768
CPCH01L21/76852H01L21/7685H01L21/76828H01L23/53238H01L23/5329H01L21/76835H01L21/76856H01L23/53295H01L2924/0002H01L21/76832H01L21/76825H01L21/76849H01L21/76859H01L21/76829H01L21/76826H01L2924/00
Inventor 上野和良
Owner NEC ELECTRONICS CORP