Method for manufacturing thyratron transistor door-pole and cathode isolation

A manufacturing method and thyristor technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as troublesome operation, chip cracking, adding two molybdenum sheet bonding processes, etc., and achieve the effect of preventing damage.

Inactive Publication Date: 2006-09-06
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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Problems solved by technology

The pasting method of the above prior art obviously has the following disadvantages: 1. The production and packaging cycle is long; 2. The operation is troublesome: two times of molybdenum sheet pasting process are added, and after the molybdenum sheet is unloaded, it is difficult to remove the residual glue; 3. Due to the pen

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  • Method for manufacturing thyratron transistor door-pole and cathode isolation
  • Method for manufacturing thyratron transistor door-pole and cathode isolation
  • Method for manufacturing thyratron transistor door-pole and cathode isolation

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Embodiment Construction

[0013] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0014] Such as figure 2 , 3 As shown, in the structure of the thyristor, the gate 15 is generally arranged in the center of the device to facilitate the extraction of the gate 15, wherein the amplifying gate 17 is suspended, and the cathode 16 is in the outermost layer. With the development of thyristors in the direction of high current and high voltage, in order to improve the dynamic characteristics of thyristor devices, it is sometimes necessary to use figure 2 Similar complex gate cathode structure. In the packaging process, in order to avoid the short circuit between the amplification gate 17 and the cathode 16 and to facilitate packaging, the conventional method is to paste a piece of conductive sheet on the cathode 16 surface with a pattern close to the cathode surface. The method of the present invention is exactly by adopting means such as mask,...

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Abstract

The present invention discloses a thyristor gate polar and cathode isolative manufacturing method. It contains thyristor chip preparation, testing and packaging, making mask block piece and packaging gasket, installing mask block piece, installing chip by alignment of mask graphic, first vaporization, taking off mask block piece and chip, installing chip once more, a second time vaporization, general technology annealing, etching, floor molding and protecting, and installing package gasket to prevent electromigration before packaging. Said invention adopts mask, vaporization and photetch combined technique without sticking cathode conducting strip to realize gate polar, amplification gate polar and cathodal isolation, effectively preventing device damage in thereafter testing packaging process.

Description

technical field [0001] The invention relates to a method for manufacturing a thyristor, in particular to a method for isolating the gate and cathode of a thyristor. Background technique [0002] With the advancement of thyristor manufacturing technology, thyristors are developing towards high current and high voltage. In order to improve the dynamic characteristics of thyristors, complex gate-cathode structures must be adopted. Since the amplifying gate and cathode of this structure are intersected, it cannot be packaged in a conventional way, otherwise it will cause a short circuit between the amplifying gate and cathode, so that the thyristor cannot be turned on normally. For the convenience of thyristor packaging with complex gate-cathode structure, the method commonly used internationally and domestically is to paste a piece of molybdenum sheet or other conductive sheet similar to the cathode pattern on the cathode surface of the thyristor, so t...

Claims

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Application Information

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IPC IPC(8): H01L21/332H01L21/50
Inventor 黄建伟刘国友邹冰艳李世平丁昱
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD
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