Flashmemory safety read-write method

A read-write method and flash memory technology, applied in the field of secure read-write of flash memory, can solve the problems of unsafe memory occupation and unbalanced wear and tear, and achieve the effect of improving service life, wear balance and system performance.

Active Publication Date: 2006-10-25
FEITIAN TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The problem to be solved by the present invention is to overcome the disadvantages of unbalanced wear, insecurity and excessive memory usage in the above-mentioned flash memory read and write operations, and provide a safe, wear-balanced and memory-saving method for safe read and write of flash memory

Method used

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Embodiment Construction

[0024] The present invention is described in further detail below in conjunction with specific embodiment:

[0025] The present invention adopts the idea of ​​reading and writing based on misalignment, and misalignment is relative to the standard commonly used in the past. The so-called standard method of writing the memory is to rewrite the contents to be modified on the erased storage block storing the original data, and the specific operation process has been described in detail above.

[0026] The key to misplaced reading and writing is that when modifying the data in the flash memory, it is not written on the original physical address, but written on the new physical address. The biggest advantage of this method is that it will not erase the entire erase block in order to modify a certain place, and then re-read and write data, so that there is no need to frequently erase a fixed erase block, and it does not need to occupy too much memory capacity, and can effectively ac...

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Abstract

Said method contains flush memory to proceed erasing operation using erasing block, file storing erasing block adopting log structure recorded file header added data object form, according to file header to proceed read write operation to file. The data modification is written in new physical address not original physical address. Even if in power down status in writing data process, system can very easy recover systematical data through rescanning and checking file header log information validity. Flush memory malposition writing method can ensure flush memory abrasion balance capable of effectively saving system memory and raising system performance.

Description

technical field [0001] The invention relates to a safe reading and writing method for a flash memory, in particular to a safe reading and writing method for an embedded system. Background technique [0002] With the rapid development and wide application of embedded systems, there is a great need for a non-volatile memory device that can be programmed multiple times, has a large capacity, is fast, convenient, and simple to read, write, and erase, has fewer peripheral devices, and is inexpensive. The flash memory (Flash Memory) storage medium emerges as the times require under this background demand. It is a semiconductor-based memory, which has the functions of retaining internal information after the system is powered off, and online erasing. It is a new type of memory that replaces EEPROM storage media. And its read and write speed is faster than EEPROM, and the cost is lower under the same capacity. Because of its characteristics of low operating voltage, low power cons...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F17/30
Inventor 陆舟于华章
Owner FEITIAN TECHNOLOGIES
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