Electro-optical device, method of manufacturing the same, and electronic apparatus
An electro-optical device and electrode technology, which is applied in semiconductor/solid-state device manufacturing, optics, circuits, etc., can solve the problems of lower yield and lower capacitance, achieve good yield, reduce capacitance drop, and eliminate the problem of lower component characteristics Effect
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no. 1 Embodiment approach
[0064] (The overall structure of the electro-optical device)
[0065] First, for the overall configuration of a TFT active matrix drive type liquid crystal device with a built-in drive circuit, which is an example of the electro-optic device of this embodiment, refer to figure 1 and figure 2 Be explained. figure 1 , is a plan view of the electro-optic device of the TFT array substrate and the constituent elements formed thereon viewed together from the side facing the substrate; figure 2 ,yes figure 1 The H-H' line profile.
[0066] exist figure 1 and figure 2 Among them, a liquid crystal device 1 includes a TFT array substrate 10 and a counter substrate 20 arranged to face the TFT substrate 10 . A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing area around the image display area 10a.
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Deformed example 1
[0102] The upper capacitive electrode 300 has an opening 300 a, and the lower capacitive electrode 71 has a separation portion 71 a between adjacent pixels above the transistor 30 .
[0103] Figure 6 , is a plan view showing a planar structure near the TFT 30 in the liquid crystal device 1 . exist Figure 6 Among them, the opening 300a is formed by removing or patterning a portion of the upper capacitive electrode 300 extending above the TFT 30 . Therefore, by forming the upper capacitive electrode 300 collectively so as to extend over a plurality of pixel portions, it is possible to prevent the upper capacitive electrode 300 from hindering the hydrogenation process of the TFT 30, more specifically, the hydrogenation process to the channel region 1a'. Furthermore, since the lower capacitive electrode 71 is separated on the TFT 30 to be provided in each pixel portion, the TFT 30 located therebelow can be hydrogenated by the separated portion 71 a of the lower capacitive elec...
Deformed example 2
[0106] Figure 7 , is the representation corresponding to Figure 5 A cross-sectional view of a main part of the structure in the vicinity of the TFT 30 in the cross-section shown in FIG. exist Figure 7 In this example, the separating portion 300b is formed to separate the upper capacitive electrode 300, the dielectric film 75, and the lower capacitive electrode 71 constituting the storage capacitor 70 between the pixel portions so that the adjacent pixel portions provided on the TFT 30 The holding capacitors are separated.
[0107] According to the storage capacitor 70 included in the liquid crystal device 1 of this example, the hydrogenation process to the TFT 30 performed from above the storage capacitor 70 is not hindered by the storage capacitor 70 . More specifically, since the dielectric film 75 is formed to avoid the gate electrode 3a of the TFT 30, that is, the channel region 1a', it can be more effectively compared to the case where only the upper capacitive elec...
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Abstract
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