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Process for producing solar battery element and solar battery element

A technology of solar cells and manufacturing methods, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, final product manufacturing, etc., can solve problems such as ineffectiveness, inability to obtain sufficient effects, and deterioration of characteristics.

Inactive Publication Date: 2011-01-05
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, even if the methods disclosed in Patent Document 1 and Patent Document 2 are applied to ultra-straight a-Si:H thin-film solar cells, sufficient effects cannot be obtained.
[0009] In addition, it is known that, as described in Japanese Patent Laid-Open No. 2004-31518 (Patent Document 3), a thin-film solar cell formed of microcrystalline silicon (hereinafter referred to as μc-Si) suffers from the same cause, and also cause characteristic deterioration
However, even if the technology disclosed in Patent Document 3 is applied to an ultra-straight a-Si:H thin-film solar cell, sufficient effects cannot be obtained.

Method used

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  • Process for producing solar battery element and solar battery element
  • Process for producing solar battery element and solar battery element
  • Process for producing solar battery element and solar battery element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0090] In this embodiment, by implementing the n-type dopant introduction treatment by the above-mentioned first method, the corresponding Figure 8 The five data points of the solar cell element.

[0091] First, prepare the surface with pre-formed SnO 2 A commercially available glass substrate for the film was used as the transparent substrate 1 . in SnO 2 The surface of the film is formed with SnO formed by thermal CVD 2 The height of the unevenness or the average period of the unevenness that sometimes occurs naturally in the film is an uneven structure of about 100 to 200 nm. It should be noted that the glass substrate formed a square with a side of 100 mm in planar view.

[0092] This glass substrate was placed on the cleaned tray 103 in the reaction chamber 101 of the parallel plate type plasma CVD apparatus 100, and an n-type dopant introduction process was performed. Specifically, with a frequency of 13.56MHz and an input power of 0.125W / cm 2 A voltage is applied...

Embodiment 2

[0109] In this example, the solar cell element 10 was obtained by performing the n-type dopant introduction treatment by the above-mentioned second method.

[0110] First, as in Example 1, prepare to have SnO formed on the surface 2 The glass substrate of the film is placed on the tray 103 in the reaction chamber 101 of the plasma CVD film forming apparatus 100 . As for the tray 103, the tray 103 on which the pin bonding components were formed was not cleaned in the previous process, and was used for the uncleaned tray of this embodiment. The tray 103 has a blank area E around the state where the glass substrate is placed.

[0111] In this state, as in Example 1, p-type layer 3 , i-type layer 4 , and n-type layer 5 were sequentially formed. Thereafter, electrode layer 6 was formed in the same manner as in Example 1.

[0112] 16 solar cell elements were produced under the same production conditions, and the current-voltage characteristics were measured for each of them by a ...

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Abstract

Disclosed is a superstraight-type a-Si:H thin film solar battery element that has improved element characteristics over the conventional solar battery element. The solar battery element is produced by a process comprising the step of depositing phosphorus on a transparent electroconductive film provided on a transparent substrate and the step of successively forming a p-type layer, an i-type layer, and an n-type layer of a-Si:H by plasma CVD on the transparent electroconductive film. The phosphorus is deposited, for example, by plasmatization of a phosphorus-containing gas. Alternatively, the phosphorus may be deposited by, at the start of formation of the p-type layer by plasma CVD, etching a phosphorus supply source, provided in margin areas where the transparent substrate is not provided although a plasma excitation voltage is applied, with hydrogen plasma. Preferably, the deposition of the phosphorus is controlled so that the arithmetic average value (DeltaCav) of the difference in concentration between boron and phosphorus within a boron diffusion range in the i-type layer is 1.1X1017(cm-3) <= DeltaCav <= 1.6X1017(cm-3) or less.

Description

technical field [0001] The present invention relates to a thin-film solar cell, in particular to a thin-film solar cell with a p-i-n junction structure composed of amorphous material mainly composed of silicon. Background technique [0002] A thin-film solar cell is a p-type layer (semiconductor layer having p-type conductivity properties), an i-type layer (non-doped semiconductor layer), and The n-type layer (semiconductor layer having n-type conductivity properties) has a p-i-n junction. [0003] Thin-film solar cells are roughly classified into a substrate type and a superstraight type from the viewpoint of the film configuration with the p-type layer side as the light incident side and the arrangement relationship of the substrate. When the light incident side becomes the p-type layer, the substrate-type thin-film solar cell has a structure in which an electrode layer is formed on a supporting substrate, and an n-type layer, an i-type layer, and a p-type layer of silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04
CPCC23C16/4488H01L31/077H01L31/076H01L31/202H01L31/03762H01L21/2257Y02E10/548H01L31/03921C23C16/50Y02E10/547Y02P70/50
Inventor 新乐浩一西村刚太伊藤宪和稻叶真一郎
Owner KYOCERA CORP