Method for manufacturing film transistor
A technology of thin film transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the characteristics of thin film transistor elements, change the properties of active layer films, etc., to achieve stable film characteristics and improve device characteristics Effect
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no. 1 example
[0054] Figure 1A to Figure 1G is a schematic cross-sectional view of the manufacturing method of the thin film transistor according to the first embodiment of the present invention.
[0055] Please refer to Figure 1A, firstly, the gate 102 is formed on the substrate 100 . The substrate 100 is, for example, a glass substrate, a quartz substrate or other substrates. The material of the gate 102 is, for example, aluminum, chromium, tantalum or other metal materials, and its forming method includes thin film deposition process, photolithography process and etching process. Wherein, the thin film deposition process may be sputtering, electroplating, spin coating, printing, electroless plating or other suitable methods.
[0056] Then, a gate insulating layer 104 is formed on the substrate 100 to cover the gate 102 . The material of the gate insulating layer 104 is, for example, a dielectric material such as silicon dioxide, silicon nitride, or silicon oxynitride, and its format...
no. 2 example
[0066] Figure 2A to Figure 2G is a schematic cross-sectional view of the manufacturing method of the thin film transistor according to the second embodiment of the present invention. In this embodiment, the front-end process of the thin film transistor is similar to that of the first embodiment, please refer to Figure 1A The corresponding description thereof will not be repeated here.
[0067] Please refer to Figure 2A , the gate 102 , the gate insulating layer 104 and the metal oxide material layer 106 have been formed on the substrate 100 . First, an insulating material layer 107 is formed on the metal oxide material layer 106 . The material of the insulating material layer 107 includes an inorganic insulating material or an organic insulating material. The inorganic insulating material is, for example, silicon oxide or silicon nitride, and the organic insulating material is, for example, polymethyl methacrylate (polymethyl methacrylate, PMMA) or polyethylene. Materia...
no. 3 example
[0077] Figure 4A to Figure 4D is a schematic cross-sectional view of the manufacturing method of the thin film transistor according to the third embodiment of the present invention.
[0078] Please refer to Figure 4A Firstly, the gate 202 and the gate insulating layer 204 are sequentially formed on the substrate 200 . The materials and formation methods of the gate 202 and the gate insulating layer 204 can be referred to the description in the first embodiment, and will not be repeated here.
[0079] Then, a metal oxide active layer 206 is formed on the gate insulating layer 204 above the gate 202 . The material of the metal oxide active layer 206 includes group II-VI compounds, such as ZnO, and its formation method is, for example, a non-vacuum process, which is a process performed in a non-vacuum chamber, such as spin-coating (Spin-coating) , Inject printing, Drop printing, Casting, Micro-stamp, Screen printing, Imprinting and other methods. In an embodiment, the metho...
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