121 results about "Capacitive electrodes" patented technology

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a triangular grid mode more reasonably and precisely, so that the capacitor can store more charges.

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a quadrilateral grid mode more reasonably and precisely, so that the capacitor can store more charges.

The invention discloses a display panel and a display device. The display panel comprises a substrate and a plurality of pixel circuits located on the substrate. Each pixel circuit comprises a first capacitor and a second capacitor; the first capacitor comprises a first capacitor electrode and a second capacitor electrode, the second capacitor comprises a third capacitor electrode and a fourth capacitor electrode, the third capacitor electrode is electrically connected with the second capacitor electrode, and the fourth capacitor electrode is configured to receive a constant voltage signal. The overlapping area of the first capacitor electrode and the second capacitor electrode is different from the overlapping area of the third capacitor electrode and the fourth capacitor electrode. According to the overall layout design of the pixel circuit, the compensation effect of the threshold voltage is better, and meanwhile the size and the pixel resolution of the display panel are comprehensively considered.

The application discloses a superconducting quantum computing chip based on a corrosion-resistant Josephson junction and a preparation method thereof. The superconducting quantum computing chip comprises a substrate, a plurality of superconducting quantum bits arranged periodically on a first surface of the substrate, each of the superconducting quantum bits comprising two capacitive electrodes and a Josephson junction connecting the two capacitive electrodes, and a protective layer on a surface of the Josephson junction.

The present disclosure relates to a self- and mutual-capacitance hybrid touch sensor panel architecture. A touch sensor panel is disclosed herein. The touch sensor panel includes a first set of touch electrodes configured to operate as drive lines and disposed in a first layer of the touch sensor panel. The touch sensor panel also includes a second set of touch electrodes configured to operate as sense lines and disposed in a second layer of the touch sensor panel different from the first layer of the touch sensor panel such that one or more mutual-capacitance touch nodes are formed by the first set of touch electrodes and the second set of touch electrodes. The touch sensor panel further includes a third set of touch electrodes configured to operate as self-capacitance electrodes and disposed in the first layer or the second layer of the touch sensor panel.

The invention relates to the technical field of flexible electronic sensors, in particular to a flexible large strain sensor for crack detection and a preparation method thereof.The flexible large strain sensor comprises a skeleton-shaped packaging layer, the packaging layer comprises two rigid fixing ends, and the two rigid fixing ends are integrally connected through a sensitive unit section; a rigid reinforcing structure is embedded in each rigid fixing end, mechanical fixing holes are formed in each rigid fixing end and the corresponding rigid reinforcing structure in a penetrating mode, interdigital capacitor electrodes are embedded in the sensitive unit sections, and the interdigital capacitor electrodes are made of flexible conductive materials through laser ablation. The end part of the interdigital capacitor electrode is connected with a flexible extension wire, the tail end of the flexible extension wire is connected with an external lead, and the external lead is embedded between the packaging layer and the upper surface of the rigid fixed end; the problems that an existing flexible sensor is unstable in installation, contradictory in measuring range and precision and poor in environmental adaptability in structural crack detection are solved.

The invention relates to the technical field of energy storage batteries, in particular to a negative plate, a preparation method thereof and a sodium ion battery. The negative plate comprises a current collector and an active material layer arranged on at least one side of the current collector; the active substance layer comprises an inner substance layer close to the current collector and an outer substance layer far away from the current collector; according to the negative plate, the preparation method and the sodium ion battery, a third active substance of a capacitive electrode material is introduced into a negative electrode, energy conversion of the capacitive electrode material mainly depends on rapid electrostatic adsorption of double electric layers on the surface of the material, and the process belongs to a surface-controlled physical adsorption process; diffusion of sodium ions in a material bulk phase is hardly involved, so that high-rate charge and discharge can be realized.

The display panel, the display device and the manufacturing method of the display panel are provided. The display panel comprises a substrate substrate; a pixel circuit arranged on the substrate substrate, the pixel circuit comprising a transistor, the transistor comprising an active layer, a gate, a first electrode and a second electrode; and a fingerprint identification circuit, the fingerprint identification circuit comprising a photosensitive circuit, a storage circuit and an output circuit, the storage circuit comprising a first capacitor, the first capacitor comprising a first capacitor electrode and a second capacitor electrode; the first capacitor electrode is arranged in the same layer as at least one of the gate, the active layer, the first electrode or the second electrode, and / or the second capacitor electrode is arranged in the same layer as at least one of the gate, the active layer, the first electrode or the second electrode; the first capacitor electrode and the second capacitor electrode are arranged in different layers, and the orthographic projection of the first capacitor electrode and the second capacitor electrode on the substrate substrate at least partially overlaps.

The application belongs to the technical field of conductive connection, and discloses a tantalum capacitor electrode connection structure, which comprises a tantalum capacitor connecting seat assembly and a tantalum capacitor assembly. The inside bottom end of the tantalum capacitor connecting seat assembly is provided with a conductive transposition assembly, and the inside top end of the tantalum capacitor connecting seat assembly is provided with a first transposition driving assembly and a second transposition driving assembly. The conductive positive electrode and the conductive negative electrode are optimized and improved, and the movable conductive connection is realized. Moreover, the long and short pins of the tantalum capacitor assembly are inserted in sequence with the conductive positive electrode and the conductive negative electrode. No matter whether the long and short pins are inserted in the positive direction or the reverse direction, the structure linkage is adopted, so that the long and short pins of the tantalum capacitor assembly are always in one-to-one positive direction with the conductive positive electrode and the conductive negative electrode, that is, the error-avoiding conductive connection is realized. When the tantalum capacitor assembly is disassembled, the arc-shaped reset spring is pushed and reset, and the tantalum capacitor assembly forms the electrode power-off action of self-ejection on the tantalum capacitor connecting seat assembly.

The application belongs to the technical field of chemical separation materials, and relates to a preparation method of a sulfonated polythiophene modified nitrogen-doped honeycomb carbon and Co9S8 composite microsphere integrated flow electrode, which comprises the following steps: taking chitosan as a carbon source and a nitrogen source, adding a cobalt source and a sulfur source, performing cross-linking aging, forming and curing, performing freeze drying and high-temperature carbonization, and obtaining chitosan derived nitrogen-doped honeycomb carbon and Co9S8 composite microspheres; taking thiophene and 3-sulfonic acid thiophene as monomers, coating a sulfonated polythiophene film on the surface of the composite microspheres through chemical polymerization, and obtaining the integrated flow electrode. The high specific capacitance electrode material and the conductive ion exchange membrane function are combined into one, the specific capacitance, the hydrophilicity and the ion selective permeability are significantly improved, the integrated flow electrode is used for deionization technology treatment of uranium-containing wastewater, the uranium removal rate is high, the electric adsorption capacity is large, the balance time is short, the device is simplified, and the application prospect is wide.

The present disclosure relates to a self- and mutual-capacitance hybrid touch sensor panel architecture. A touch sensor panel is disclosed herein. The touch sensor panel includes a first set of touch electrodes configured to operate as drive lines and disposed in a first layer of the touch sensor panel. The touch sensor panel also includes a second set of touch electrodes configured to operate as sense lines and disposed in a second layer of the touch sensor panel different from the first layer of the touch sensor panel such that one or more mutual-capacitance touch nodes are formed by the first set of touch electrodes and the second set of touch electrodes. The touch sensor panel further includes a third set of touch electrodes configured to operate as self-capacitance electrodes and disposed in the first layer or the second layer of the touch sensor panel.

A circuit carrier includes a substrate, a capacitive electrode layer, a plurality of metal pads and a plurality of bridges, and a plurality of conductive pillars. The capacitive electrode layer formed on a surface of the substrate and includes a plurality of first electrodes and a plurality of second electrodes. At least two of the first electrodes are connected to each other and be arranged across a die-bonding region of the substrate for separating at least two of the second electrodes that partially protrude from the die-bonding region to respectively form extensions. The metal pads and the bridges are formed on another surface of the substrate and are located outside of the die-bonding region. Each of the bridges connects two of the metal pads, and each of the conductive pillars is embedded in the substrate and connects one of the extensions and a corresponding one of metal pads.

Provided is a detection device with which it is possible to improve detection accuracy. A detection device comprises: a substrate; and, on the substrate, a first inorganic insulating film, a drive transistor, an organic insulating film, a second inorganic insulating film, a lower electrode, a photodiode, and an upper electrode. The first inorganic insulating film, the drive transistor, the organic insulating film, the second inorganic insulating film, the lower electrode, the photodiode, and the upper electrode are stacked in this order. The detection device has a first capacitance electrode that is provided between the organic insulating film and the second inorganic insulating film and that faces the lower electrode. The first capacitance electrode is connected to a reference potential.

The invention provides a recovery device for a step-by-step electrochemical synthesis charged material, and belongs to the technical field of electrochemistry, the recovery device comprises a recovery cavity, a frequency conversion physical separation mechanism and a heat exchanger, and the frequency conversion physical separation mechanism is located in the recovery cavity; a feed port, an air inlet and a discharge port are formed in the recovery cavity, and the feed port is used for inputting a charged material; the variable-frequency physical separation mechanism is used for separating a capacitive electrode material and an electrolyte in the charged material to obtain a recovered capacitive electrode material and an electrolyte, a liquid collecting tank is arranged below the variable-frequency physical separation mechanism, and a liquid outlet pipe is arranged at the bottom of the liquid collecting tank; the heat exchanger provides heat energy. Through the design that the closed recovery cavity is adopted and atmosphere gas or reaction gas is input into the closed recovery cavity, the problem of introduction of external impurities can be effectively solved, and meanwhile, internal gas components can be accurately controlled, so that the introduction of a side reaction process is avoided.

A method of making a capacitor-assisted hybrid electrode for a lithium-ion electrochemical cell includes admixing a solvent, a cellulose-based dispersant, and a plurality of capacitive particles comprising carbon to form a dispersion. The cellulose-based dispersant forms hydrogen bonds with one or more carbonyl-groups on the capacitive particles comprising carbon. The dispersion is combined with an electroactive material, an electrically conductive material, and a binder to form a slurry. The slurry is applied to a current collector and solidified to form the capacitor-assisted hybrid electrode having a composite hybrid active layer on the current collector. Capacitor-assisted hybrid electrodes formed from such methods are also provided.

An array substrate includes a plurality of pixel driving circuits and a plurality of third control signal lines. A respective pixel driving circuit includes a data write transistor, a compensating transistor, a third reset transistor, a first capacitor having a first capacitor electrode and a second capacitor electrode, a second capacitor having a third capacitor electrode and a fourth capacitor electrode, and a third node connecting line. A respective third control signal line is configured to provide control signals to a gate electrode of the third reset transistor. The third node connecting line is connected to second electrodes of the compensating transistor and the data write transistor, and to the first capacitor electrode and the fourth capacitor electrode. An orthographic projection of the third node connecting line on a base substrate at least partially overlaps with an orthographic projection of the respective third control signal line on the base substrate.

The invention relates to a nested high-voltage generator and a high-voltage generation method thereof. The nested high-voltage generator comprises an independent sub-power supply, a capacitor, an electrode plate and a conductive shell, the independent sub-power supply is connected in series with the electrode plate and connected in parallel with the capacitor to form a high-voltage generating circuit; the conductive shell surrounds the outer side of the high-voltage generating circuit to form a Faraday cage, and the independent sub power supply and the capacitor are arranged in the conductive shell; a plurality of Faraday cages exist, the plurality of Faraday cages are nested, and the Faraday cage nested in the inner layer is placed in the conductive shell nested in the Faraday cage nested in the outer layer; the independent sub-power supply of the nested inner layer is connected in series with the independent power supply of the nested outer layer, and the capacitor of the nested inner layer is connected in series with the capacitor of the nested outer layer. The nested high-voltage generating circuit is provided with a plurality of independent sub-power supplies, each independent sub-power supply can independently supply power, when any one of the independent sub-power supplies is damaged, the other high-voltage generating circuits can work independently, normal use is not affected, and the technical effect of reducing regular maintenance cost and repair cost of the high-voltage generator is achieved.

Soil moisture device for plants with a housing for receiving the plants (25) and with a moisture measuring device (1) comprising a first capacitor electrode (14) and a second capacitor electrode (15) as well as an evaluation device (13), characterized in that the housing is designed in multiple parts comprising an inner pot (3) for receiving the plant soil (24), an intermediate pot (31) which surrounds the inner pot (3) at a bottom wall (26) and at a side wall (27) thereof, and an outer pot (2) which surrounds the intermediate pot (31) at a bottom wall (32) and at a side wall (33) thereof, and that the first capacitor electrode (14) and the second capacitor electrode (15) are designed with a large surface area, covering the outside of the intermediate pot (31) at a circumferential angle (φ) of at least 40°.

Touch sensor, comprehensive: a first set of touch electrodes configured to act as drive electrodes of one or more counter-capacitance touch nodes during a first mode of the touch sensor panel, and arranged in a first layer of the touch sensor, wherein the touch electrodes in the first set of touch electrodes have one or more cavities; a second set of touch electrodes configured to operate as sensing electrodes of one or more counter-capacitance touch nodes during the first mode of the touch sensor panel, and arranged in a second layer of the touch sensor that is distinct from the first layer of the touch sensor, wherein one or more counter-capacitance touch nodes are formed by the first set of touch electrodes and the second set of touch electrodes; and a third set of touch electrodes configured to operate as self-capacitance electrodes during a second mode of the touch sensor panel, wherein the third set of touch electrodes act as drive electrodes of one or more counter-capacitance touch nodes during the first mode of the touch sensor panel, wherein the third set of touch electrodes are arranged in the first layer of the touch sensor within one or more cavities in the touch electrodes of the first set of touch electrodes, where the first mode and the second mode of the touch sensor panel do not overlap in time.

An electronic device may include a display surface, the display surface having an input region that is located proximate to an edge of the display surface, a transverse substrate that is transversely oriented with respect to the display surface, a capacitance electrode disposed on the transverse substrate, where the capacitance electrode is disposed between a non-electrode shield and the display surface, a controller connected to the capacitance electrode, and memory in communication with the controller. The memory may include programmed instructions which cause the controller, when executed, to determine a user input in the input region in response to a signal from the capacitance electrode.

The application relates to the technical field of material mechanical property testing, in particular to a material Young's modulus measuring device based on an electromagnetic-capacitive coupling mechanism and application. A non-magnetic support structure comprises a top wall, a side wall and a bottom wall, the top wall is provided with a guide structure on the side facing the bottom wall, the bottom wall is provided with a bottom opening, an electromagnetic driving unit comprises a magnetic ring arranged on the inner wall of the side wall and a coil coaxially arranged in the magnetic ring, the coil is electrically connected with an external power supply and reciprocally moves along the axial direction under the driving of a square wave electric signal to generate a controllable Lorentz force; a capacitive sensing unit comprises a first capacitive electrode and a second capacitive electrode, the first capacitive electrode is fixed on the guide structure, and the second capacitive electrode is fixed on the inner side of the coil. By coaxially integrating the electromagnetic driving unit and the capacitive sensing unit in a compact physical structure, a complete "excitation-response-parameter inversion" closed-loop measurement link is realized, and the detection sensitivity, measurement precision and stability are significantly improved.

An electro-optical device includes a substrate; a pixel electrode; a laminate including multiple insulating layers disposed between the substrate and the pixel electrode; a pixel electrode contact provided in the laminate and coupled to the pixel electrode; a transistor provided in the laminate; and a capacitance element provided in the laminate and including a first capacitance electrode, a dielectric, and a second capacitance electrode, the laminate is provided with a hole portion, the capacitance element includes a trench portion provided in the hole portion, and the trench portion overlaps with the pixel electrode contact in a plan view.

The present disclosure relates to a strip element configured to be internally or externally, fixedly or removably provided to an absorbent hygiene article, such as a diaper. The strip element comprises at least one sensing element for obtaining excretion-related information in a hygiene article such as a diaper, the sensing element having a capacitor electrode, a signal line, and a ground element such as a ground electrode and / or ground line. The capacitor electrode and the ground element are for measuring an impedance. The capacitor electrode is electrically connected to the signal line. The sensing element further comprises a shielding component provided between the signal line and the ground element. The strip element is configured such that an electric potential of the shielding component synchronously oscillates with an electric potential of the signal line.

Provided is an array substrate, comprising a plurality of pixel regions arranged in an array. The array substrate comprises: a base substrate; a plurality of pixel driving circuits, which are located in the plurality of pixel regions, wherein each pixel driving circuit comprises a driving transistor and a storage capacitor, which storage capacitor comprises a first capacitor electrode, a second capacitor electrode and a third capacitor electrode; an organic insulating layer, which is located on the side of the driving transistor away from the base substrate; and a pixel electrode layer, which is located on the side of the organic insulating layer away from the base substrate, wherein the pixel electrode layer comprises a plurality of pixel electrodes that are spaced apart from each other and are respectively located in the plurality of pixel regions, the organic insulating layer has first via holes located in the pixel regions, the pixel electrodes are electrically connected to the driving transistors by means of the first via holes, and the orthographic projections of the first via holes on the base substrate are spaced apart from the orthographic projections of at least one of the first capacitor electrodes, the second capacitor electrodes and the third capacitor electrodes on the base substrate.

The application provides a display backboard, a manufacturing method thereof, a display panel and a display device. The display backboard is divided into a display area and a non-display area surrounding the display area, and the non-display area includes a fingerprint identification area. The display backboard includes: a substrate; a thin film transistor array layer arranged on one side of the substrate; a capacitor electrode layer including a first electrode layer and a second electrode layer; and a light emitting element arranged on the side of the thin film transistor array layer away from the substrate. A fingerprint identification sensor is arranged in the fingerprint identification area, and a driving electrode and a sensing electrode are arranged in the same layer as the first electrode layer and the second electrode layer of the capacitor electrode layer, respectively.

The invention discloses a capacitor structure which comprises an N-type potential well capacitor and a P-type potential well capacitor which are connected in parallel. The N-type potential well capacitor comprises an N-type potential well, an N-type gate structure, an N-type source drain region and an N-type potential well leading-out region. The P-type potential well capacitor comprises a P-type potential well, a P-type gate structure, a P-type source drain region and a P-type potential well leading-out region. The N-type and P-type gate structures are both connected to the first capacitive electrode. And the N-type and P-type source and drain regions and the N-type and P-type potential well lead-out regions are connected to a second capacitor electrode. The total capacitance value between the first capacitor electrode and the second capacitor electrode is formed by superposing the first capacitance value of the N-type potential well capacitor and the second capacitance value of the P-type potential well capacitor. And the first and second capacitance voltage change curves of the N-type and P-type potential well capacitors are complementary in size, so that the total capacitance value stably changes along with the voltage. According to the invention, the capacitance value which stably changes along with the voltage can be provided, process integration is facilitated, and additional mask plates and ion implantation processes are not needed.

Provided is a display device including an illuminance sensor. The illuminance sensor includes a read-out line disposed on a substrate and extending in a first direction, a light receiving element disposed on the read-out line, a first sensor transistor configured to control a sensing current based on a voltage of a sensor node, which is a first electrode of the light receiving element, a second sensor transistor configured to supply a reset voltage to the sensor node based on a reset signal, a third sensor transistor configured to electrically connect a first electrode of the first sensor transistor to the read-out line based on a gate signal, and a sensor capacitor comprising a first capacitor electrode electrically connected to the first electrode of the first sensor transistor, and a second capacitor electrode overlapping the first capacitor electrode and electrically connected to the first electrode of the light receiving element.

The invention relates to the technical field of biological feature recognition and health monitoring, and discloses a heart rate and blood oxygen detection and transparent capacitance fingerprint multiplexing composite sensor device which comprises an upper layer (contact layer) and a transparent capacitance electrode array. A middle layer (optical layer), a light-transmitting isolation and photoelectric device layer; and a lower layer (processing layer), a signal processing and control unit. The working method of the composite sensor device for heart rate and blood oxygen detection and transparent capacitance fingerprint multiplexing comprises the following time division multiplexing processes: 1, a fingerprint identification stage (0-100ms); and 2, a heart rate and blood oxygen detection stage (100-600ms). Compared with the prior art, the system has the advantages that 1, the system has an integration advantage (corresponding to layered structure design); 2, high-efficiency user experience (corresponding to a time division multiplexing process) is realized; 3, low-power-consumption design (corresponding to time sequence control and power management); and 4, high compatibility and precision (corresponding materials and signal processing) are realized.

A display apparatus and a method of manufacturing the same are provided. The display apparatus includes a thin-film transistor including a semiconductor layer including a source region and a gate electrode overlapping the channel region, a lower electrode disposed under the semiconductor layer, a capacitor electrically connected to the thin-film transistor and including a first capacitor electrode and a second capacitor electrode over the first capacitor electrode, the first capacitor electrode being disposed on a same layer as the lower electrode, and a first insulating layer including a first portion and a second portion, the first portion being between the lower electrode and the semiconductor layer, and the second portion being between the first capacitor electrode and the second capacitor electrode, wherein a thickness of the second portion of the first insulating layer is less than a thickness of the first portion of the first insulating layer.

A display apparatus includes a first capacitor electrode, a second capacitor electrode over the first capacitor electrode and overlapping the first capacitor electrode, a power voltage line over the second capacitor electrode and electrically connected to the second capacitor electrode, a connection electrode at a same layer as the power voltage line, the connection electrode being electrically connected to the first capacitor electrode, and a pixel electrode over the connection electrode and electrically connected to the connection electrode. A high-quality image may be displayed on the display apparatus.