190 results about "Capacitive electrodes" patented technology

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a triangular grid mode more reasonably and precisely, so that the capacitor can store more charges.

The utility model discloses a silicon capacitor electrode structure and a silicon capacitor, which can further improve the capacitance of a capacitor in a limited space by nesting, combining and arranging a plurality of groups of element arrays distributed in a quadrilateral grid mode more reasonably and precisely, so that the capacitor can store more charges.

The invention discloses a display panel and a display device. The display panel comprises a substrate and a plurality of pixel circuits located on the substrate. Each pixel circuit comprises a first capacitor and a second capacitor; the first capacitor comprises a first capacitor electrode and a second capacitor electrode, the second capacitor comprises a third capacitor electrode and a fourth capacitor electrode, the third capacitor electrode is electrically connected with the second capacitor electrode, and the fourth capacitor electrode is configured to receive a constant voltage signal. The overlapping area of the first capacitor electrode and the second capacitor electrode is different from the overlapping area of the third capacitor electrode and the fourth capacitor electrode. According to the overall layout design of the pixel circuit, the compensation effect of the threshold voltage is better, and meanwhile the size and the pixel resolution of the display panel are comprehensively considered.

The utility model discloses a display panel and a display device. The display panel comprises a substrate and a plurality of pixel circuits located on the substrate. Each pixel circuit comprises a first capacitor and a second capacitor; the first capacitor comprises a first capacitor electrode and a second capacitor electrode, the second capacitor comprises a third capacitor electrode and a fourth capacitor electrode, the third capacitor electrode is electrically connected with the second capacitor electrode, and the fourth capacitor electrode is configured to receive a constant voltage signal. The overlapping area of the first capacitor electrode and the second capacitor electrode is different from the overlapping area of the third capacitor electrode and the fourth capacitor electrode. The utility model provides an overall layout design of a pixel circuit, which comprehensively considers the size and pixel resolution of a display panel while enabling the compensation effect of threshold voltage to be better.

The application discloses a superconducting quantum computing chip based on a corrosion-resistant Josephson junction and a preparation method thereof. The superconducting quantum computing chip comprises a substrate, a plurality of superconducting quantum bits arranged periodically on a first surface of the substrate, each of the superconducting quantum bits comprising two capacitive electrodes and a Josephson junction connecting the two capacitive electrodes, and a protective layer on a surface of the Josephson junction.

The present disclosure relates to a self- and mutual-capacitance hybrid touch sensor panel architecture. A touch sensor panel is disclosed herein. The touch sensor panel includes a first set of touch electrodes configured to operate as drive lines and disposed in a first layer of the touch sensor panel. The touch sensor panel also includes a second set of touch electrodes configured to operate as sense lines and disposed in a second layer of the touch sensor panel different from the first layer of the touch sensor panel such that one or more mutual-capacitance touch nodes are formed by the first set of touch electrodes and the second set of touch electrodes. The touch sensor panel further includes a third set of touch electrodes configured to operate as self-capacitance electrodes and disposed in the first layer or the second layer of the touch sensor panel.

A display device and a manufacturing method of the display device are provided. A display device includes a conductive line disposed on a substrate, a first capacitor electrode disposed on the conductive line and electrically connected to the conductive line, a passivation layer disposed on the first capacitor electrode, a first electrode disposed on the passivation layer and at least partially overlapping the first capacitor electrode in a plan view, a second electrode spaced apart from the first electrode, the second electrode and the first electrode being disposed on a same layer, and light emitting elements disposed between the first electrode and the second electrode.

The invention relates to the technical field of flexible electronic sensors, in particular to a flexible large strain sensor for crack detection and a preparation method thereof.The flexible large strain sensor comprises a skeleton-shaped packaging layer, the packaging layer comprises two rigid fixing ends, and the two rigid fixing ends are integrally connected through a sensitive unit section; a rigid reinforcing structure is embedded in each rigid fixing end, mechanical fixing holes are formed in each rigid fixing end and the corresponding rigid reinforcing structure in a penetrating mode, interdigital capacitor electrodes are embedded in the sensitive unit sections, and the interdigital capacitor electrodes are made of flexible conductive materials through laser ablation. The end part of the interdigital capacitor electrode is connected with a flexible extension wire, the tail end of the flexible extension wire is connected with an external lead, and the external lead is embedded between the packaging layer and the upper surface of the rigid fixed end; the problems that an existing flexible sensor is unstable in installation, contradictory in measuring range and precision and poor in environmental adaptability in structural crack detection are solved.

The invention discloses a trench capacitor electrode structure and a trench capacitor, through an element array formed by high-density arrangement of element units with multiple rotational symmetry, and in combination with the arrangement design of an interconnection region for metal interconnection in a later process, the capacitance density is greatly improved, and meanwhile, the reliability of the trench capacitor electrode structure is improved. The surface area of the electrode is effectively increased, electric field distribution is optimized, the high-frequency characteristic of the device is improved, the electrical performance of the device is remarkably improved, and the structural stability of the device is improved.

The invention relates to the technical field of energy storage batteries, in particular to a negative plate, a preparation method thereof and a sodium ion battery. The negative plate comprises a current collector and an active material layer arranged on at least one side of the current collector; the active substance layer comprises an inner substance layer close to the current collector and an outer substance layer far away from the current collector; according to the negative plate, the preparation method and the sodium ion battery, a third active substance of a capacitive electrode material is introduced into a negative electrode, energy conversion of the capacitive electrode material mainly depends on rapid electrostatic adsorption of double electric layers on the surface of the material, and the process belongs to a surface-controlled physical adsorption process; diffusion of sodium ions in a material bulk phase is hardly involved, so that high-rate charge and discharge can be realized.

The display panel, the display device and the manufacturing method of the display panel are provided. The display panel comprises a substrate substrate; a pixel circuit arranged on the substrate substrate, the pixel circuit comprising a transistor, the transistor comprising an active layer, a gate, a first electrode and a second electrode; and a fingerprint identification circuit, the fingerprint identification circuit comprising a photosensitive circuit, a storage circuit and an output circuit, the storage circuit comprising a first capacitor, the first capacitor comprising a first capacitor electrode and a second capacitor electrode; the first capacitor electrode is arranged in the same layer as at least one of the gate, the active layer, the first electrode or the second electrode, and / or the second capacitor electrode is arranged in the same layer as at least one of the gate, the active layer, the first electrode or the second electrode; the first capacitor electrode and the second capacitor electrode are arranged in different layers, and the orthographic projection of the first capacitor electrode and the second capacitor electrode on the substrate substrate at least partially overlaps.

The application belongs to the technical field of conductive connection, and discloses a tantalum capacitor electrode connection structure, which comprises a tantalum capacitor connecting seat assembly and a tantalum capacitor assembly. The inside bottom end of the tantalum capacitor connecting seat assembly is provided with a conductive transposition assembly, and the inside top end of the tantalum capacitor connecting seat assembly is provided with a first transposition driving assembly and a second transposition driving assembly. The conductive positive electrode and the conductive negative electrode are optimized and improved, and the movable conductive connection is realized. Moreover, the long and short pins of the tantalum capacitor assembly are inserted in sequence with the conductive positive electrode and the conductive negative electrode. No matter whether the long and short pins are inserted in the positive direction or the reverse direction, the structure linkage is adopted, so that the long and short pins of the tantalum capacitor assembly are always in one-to-one positive direction with the conductive positive electrode and the conductive negative electrode, that is, the error-avoiding conductive connection is realized. When the tantalum capacitor assembly is disassembled, the arc-shaped reset spring is pushed and reset, and the tantalum capacitor assembly forms the electrode power-off action of self-ejection on the tantalum capacitor connecting seat assembly.

The present disclosure relates to a strip-like element configured to be fixedly or detachably provided to an absorbent hygiene article, such as a diaper, either internally or externally. The strip-like element comprises at least one sensing element for acquiring information related to excretion in the hygiene article, such as a diaper, the sensing element having a capacitive electrode, a signal line and a ground element, such as a ground electrode and / or a ground line. The capacitive electrode and the ground element are for measuring impedance. The capacitive electrode is electrically connected to the signal line. The sensing element further comprises a shielding member arranged between the signal line and the ground element. The strip-like element is configured to cause the potential of the shielding member to oscillate in synchronism with the potential of the signal line.

The application belongs to the technical field of chemical separation materials, and relates to a preparation method of a sulfonated polythiophene modified nitrogen-doped honeycomb carbon and Co9S8 composite microsphere integrated flow electrode, which comprises the following steps: taking chitosan as a carbon source and a nitrogen source, adding a cobalt source and a sulfur source, performing cross-linking aging, forming and curing, performing freeze drying and high-temperature carbonization, and obtaining chitosan derived nitrogen-doped honeycomb carbon and Co9S8 composite microspheres; taking thiophene and 3-sulfonic acid thiophene as monomers, coating a sulfonated polythiophene film on the surface of the composite microspheres through chemical polymerization, and obtaining the integrated flow electrode. The high specific capacitance electrode material and the conductive ion exchange membrane function are combined into one, the specific capacitance, the hydrophilicity and the ion selective permeability are significantly improved, the integrated flow electrode is used for deionization technology treatment of uranium-containing wastewater, the uranium removal rate is high, the electric adsorption capacity is large, the balance time is short, the device is simplified, and the application prospect is wide.

The present disclosure relates to a self- and mutual-capacitance hybrid touch sensor panel architecture. A touch sensor panel is disclosed herein. The touch sensor panel includes a first set of touch electrodes configured to operate as drive lines and disposed in a first layer of the touch sensor panel. The touch sensor panel also includes a second set of touch electrodes configured to operate as sense lines and disposed in a second layer of the touch sensor panel different from the first layer of the touch sensor panel such that one or more mutual-capacitance touch nodes are formed by the first set of touch electrodes and the second set of touch electrodes. The touch sensor panel further includes a third set of touch electrodes configured to operate as self-capacitance electrodes and disposed in the first layer or the second layer of the touch sensor panel.

An array substrate includes a plurality of pixel driving circuits and a plurality of gate lines. A respective pixel driving circuit includes a driving transistor, a data write transistor, a first reset transistor, a first capacitor having a first capacitor electrode and a second capacitor electrode, a second capacitor having a third capacitor electrode and a fourth capacitor electrode, and a first node connecting line. A respective gate line is configured to provide gate scanning signal to the data write transistor in the respective pixel driving circuit. A gate electrode of the driving transistor is connected to the third capacitor electrode. The first node connecting line connects a second electrode of the first reset transistor with the third capacitor electrode. An orthographic projection of the respective gate line on a base substrate is substantially non-overlapping with an orthographic projection of the first node connecting line on the base substrate.

A circuit carrier includes a substrate, a capacitive electrode layer, a plurality of metal pads and a plurality of bridges, and a plurality of conductive pillars. The capacitive electrode layer formed on a surface of the substrate and includes a plurality of first electrodes and a plurality of second electrodes. At least two of the first electrodes are connected to each other and be arranged across a die-bonding region of the substrate for separating at least two of the second electrodes that partially protrude from the die-bonding region to respectively form extensions. The metal pads and the bridges are formed on another surface of the substrate and are located outside of the die-bonding region. Each of the bridges connects two of the metal pads, and each of the conductive pillars is embedded in the substrate and connects one of the extensions and a corresponding one of metal pads.

Provided is a detection device with which it is possible to improve detection accuracy. A detection device comprises: a substrate; and, on the substrate, a first inorganic insulating film, a drive transistor, an organic insulating film, a second inorganic insulating film, a lower electrode, a photodiode, and an upper electrode. The first inorganic insulating film, the drive transistor, the organic insulating film, the second inorganic insulating film, the lower electrode, the photodiode, and the upper electrode are stacked in this order. The detection device has a first capacitance electrode that is provided between the organic insulating film and the second inorganic insulating film and that faces the lower electrode. The first capacitance electrode is connected to a reference potential.

The invention provides a recovery device for a step-by-step electrochemical synthesis charged material, and belongs to the technical field of electrochemistry, the recovery device comprises a recovery cavity, a frequency conversion physical separation mechanism and a heat exchanger, and the frequency conversion physical separation mechanism is located in the recovery cavity; a feed port, an air inlet and a discharge port are formed in the recovery cavity, and the feed port is used for inputting a charged material; the variable-frequency physical separation mechanism is used for separating a capacitive electrode material and an electrolyte in the charged material to obtain a recovered capacitive electrode material and an electrolyte, a liquid collecting tank is arranged below the variable-frequency physical separation mechanism, and a liquid outlet pipe is arranged at the bottom of the liquid collecting tank; the heat exchanger provides heat energy. Through the design that the closed recovery cavity is adopted and atmosphere gas or reaction gas is input into the closed recovery cavity, the problem of introduction of external impurities can be effectively solved, and meanwhile, internal gas components can be accurately controlled, so that the introduction of a side reaction process is avoided.

A method of making a capacitor-assisted hybrid electrode for a lithium-ion electrochemical cell includes admixing a solvent, a cellulose-based dispersant, and a plurality of capacitive particles comprising carbon to form a dispersion. The cellulose-based dispersant forms hydrogen bonds with one or more carbonyl-groups on the capacitive particles comprising carbon. The dispersion is combined with an electroactive material, an electrically conductive material, and a binder to form a slurry. The slurry is applied to a current collector and solidified to form the capacitor-assisted hybrid electrode having a composite hybrid active layer on the current collector. Capacitor-assisted hybrid electrodes formed from such methods are also provided.

An array substrate includes a plurality of pixel driving circuits and a plurality of third control signal lines. A respective pixel driving circuit includes a data write transistor, a compensating transistor, a third reset transistor, a first capacitor having a first capacitor electrode and a second capacitor electrode, a second capacitor having a third capacitor electrode and a fourth capacitor electrode, and a third node connecting line. A respective third control signal line is configured to provide control signals to a gate electrode of the third reset transistor. The third node connecting line is connected to second electrodes of the compensating transistor and the data write transistor, and to the first capacitor electrode and the fourth capacitor electrode. An orthographic projection of the third node connecting line on a base substrate at least partially overlaps with an orthographic projection of the respective third control signal line on the base substrate.

The invention relates to a nested high-voltage generator and a high-voltage generation method thereof. The nested high-voltage generator comprises an independent sub-power supply, a capacitor, an electrode plate and a conductive shell, the independent sub-power supply is connected in series with the electrode plate and connected in parallel with the capacitor to form a high-voltage generating circuit; the conductive shell surrounds the outer side of the high-voltage generating circuit to form a Faraday cage, and the independent sub power supply and the capacitor are arranged in the conductive shell; a plurality of Faraday cages exist, the plurality of Faraday cages are nested, and the Faraday cage nested in the inner layer is placed in the conductive shell nested in the Faraday cage nested in the outer layer; the independent sub-power supply of the nested inner layer is connected in series with the independent power supply of the nested outer layer, and the capacitor of the nested inner layer is connected in series with the capacitor of the nested outer layer. The nested high-voltage generating circuit is provided with a plurality of independent sub-power supplies, each independent sub-power supply can independently supply power, when any one of the independent sub-power supplies is damaged, the other high-voltage generating circuits can work independently, normal use is not affected, and the technical effect of reducing regular maintenance cost and repair cost of the high-voltage generator is achieved.

Soil moisture device for plants with a housing for receiving the plants (25) and with a moisture measuring device (1) comprising a first capacitor electrode (14) and a second capacitor electrode (15) as well as an evaluation device (13), characterized in that the housing is designed in multiple parts comprising an inner pot (3) for receiving the plant soil (24), an intermediate pot (31) which surrounds the inner pot (3) at a bottom wall (26) and at a side wall (27) thereof, and an outer pot (2) which surrounds the intermediate pot (31) at a bottom wall (32) and at a side wall (33) thereof, and that the first capacitor electrode (14) and the second capacitor electrode (15) are designed with a large surface area, covering the outside of the intermediate pot (31) at a circumferential angle (φ) of at least 40°.

Touch sensor, comprehensive: a first set of touch electrodes configured to act as drive electrodes of one or more counter-capacitance touch nodes during a first mode of the touch sensor panel, and arranged in a first layer of the touch sensor, wherein the touch electrodes in the first set of touch electrodes have one or more cavities; a second set of touch electrodes configured to operate as sensing electrodes of one or more counter-capacitance touch nodes during the first mode of the touch sensor panel, and arranged in a second layer of the touch sensor that is distinct from the first layer of the touch sensor, wherein one or more counter-capacitance touch nodes are formed by the first set of touch electrodes and the second set of touch electrodes; and a third set of touch electrodes configured to operate as self-capacitance electrodes during a second mode of the touch sensor panel, wherein the third set of touch electrodes act as drive electrodes of one or more counter-capacitance touch nodes during the first mode of the touch sensor panel, wherein the third set of touch electrodes are arranged in the first layer of the touch sensor within one or more cavities in the touch electrodes of the first set of touch electrodes, where the first mode and the second mode of the touch sensor panel do not overlap in time.

This invention discloses a trench capacitor electrode structure and a trench capacitor. By using a high-density array of basic units with multiple rotational symmetries to form a basic unit array, combined with the arrangement design of interconnect regions for metal interconnection in subsequent processes, the capacitance density is significantly increased, while the electrode surface area is effectively increased and the electric field distribution is optimized, thereby improving the high-frequency characteristics of the device, significantly enhancing the electrical performance of the device, and improving the structural stability of the device.

An electronic device may include a display surface, the display surface having an input region that is located proximate to an edge of the display surface, a transverse substrate that is transversely oriented with respect to the display surface, a capacitance electrode disposed on the transverse substrate, where the capacitance electrode is disposed between a non-electrode shield and the display surface, a controller connected to the capacitance electrode, and memory in communication with the controller. The memory may include programmed instructions which cause the controller, when executed, to determine a user input in the input region in response to a signal from the capacitance electrode.

The present invention relates to a supercapacitor electrode material and a preparation method thereof. The supercapacitor electrode material is a nickel-cobalt-sulfur-oxygen composite metal compound supported on a conductive substrate. At a current density of 1A / g, its specific capacity reaches 7247.9F / g, which has an ultra-high specific capacity, much higher than the capacitance of similar metal sulfur oxide materials, and has good cycle stability (at a current density of 5A / g, the capacitance retention rate is 79% after 5000 cycles). The high-capacitance electrode material obtained by the present invention can be obtained in a short time (about one hour) by a one-step alternating current deposition method. Compared with existing multi-step synthesis methods such as hydrothermal growth, chemical precipitation, and electrodeposition, the present invention is simple to operate, short in time, and has a simple and easy preparation process, which provides great possibilities for the application of electrode materials in energy storage devices and then put into practical use.

The invention discloses a three-dimensional 1S1C memory and a preparation method thereof, and relates to the technical field of memorizers, the three-dimensional 1S1C memory comprises a peripheral electrode layer and a memory unit, the peripheral electrode layer is formed on a substrate, first dielectric layers and first metal electrode layers are sequentially and alternately stacked from bottom to top, and a plurality of grooves penetrating in the vertical direction are formed in the peripheral electrode layer; the grooves are parallel to each other, and the grooves are used for segmenting the first metal electrode layer; the storage unit comprises a second metal electrode layer, a second dielectric layer, a third metal electrode layer and a gate tube function layer, the top of a fourth metal electrode layer extends to the surface of the first dielectric layer on the topmost layer to form a bit line electrode, and the storage unit is formed in the area, right opposite to the first metal electrode layer, of the fourth metal electrode layer. By introducing the second metal electrode layer, a columnar capacitor structure is realized, the effective contact area of the capacitor electrode is increased, and the reliability and the capacity stability of the storage capacitor are improved.

The application relates to the technical field of material mechanical property testing, in particular to a material Young's modulus measuring device based on an electromagnetic-capacitive coupling mechanism and application. A non-magnetic support structure comprises a top wall, a side wall and a bottom wall, the top wall is provided with a guide structure on the side facing the bottom wall, the bottom wall is provided with a bottom opening, an electromagnetic driving unit comprises a magnetic ring arranged on the inner wall of the side wall and a coil coaxially arranged in the magnetic ring, the coil is electrically connected with an external power supply and reciprocally moves along the axial direction under the driving of a square wave electric signal to generate a controllable Lorentz force; a capacitive sensing unit comprises a first capacitive electrode and a second capacitive electrode, the first capacitive electrode is fixed on the guide structure, and the second capacitive electrode is fixed on the inner side of the coil. By coaxially integrating the electromagnetic driving unit and the capacitive sensing unit in a compact physical structure, a complete "excitation-response-parameter inversion" closed-loop measurement link is realized, and the detection sensitivity, measurement precision and stability are significantly improved.

An electro-optical device includes a substrate; a pixel electrode; a laminate including multiple insulating layers disposed between the substrate and the pixel electrode; a pixel electrode contact provided in the laminate and coupled to the pixel electrode; a transistor provided in the laminate; and a capacitance element provided in the laminate and including a first capacitance electrode, a dielectric, and a second capacitance electrode, the laminate is provided with a hole portion, the capacitance element includes a trench portion provided in the hole portion, and the trench portion overlaps with the pixel electrode contact in a plan view.