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Compositions and processes for immersion lithography

A technology of immersion exposure and composition, which is applied in the direction of photosensitive materials, optics, and optomechanical equipment for optomechanical equipment, and can solve the problems that immersion lithography systems do not exist widely.

Active Publication Date: 2006-12-20
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Universal and proven immersion lithography systems are not yet widely available

Method used

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  • Compositions and processes for immersion lithography
  • Compositions and processes for immersion lithography
  • Compositions and processes for immersion lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] Embodiment 1: the preparation of particle additive

[0088] The preferred fluorinated particulate additive is prepared according to the following steps:

[0089] Add the required amount of propylene glycol monomethyl ether acetate (PGMEA) in the reaction vessel, 2 Heat to 80°C under purge. The following monomers (PFPA, ECPMA, TMPTA), crosslinker and initiator (tert-amyl peroxypivalate) were mixed into PGMEA in an 80-90% by weight liquid composition in an ice bath. The content of initiator accounts for 4% of the total weight of monomer and crosslinking agent. The amount of monomer used is as follows: 70% by weight of pentafluoroacrylate (PFPA), 20% by weight of ethylcyclopentyl methacrylate (ECPMA) and 10% by weight of (trimethylolpropane triacrylate) ( TMPTA):

[0090]

[0091] The monomer / crosslinker / initiator / PGMEA mixture was then added to the reaction vessel over 90 minutes. After the addition to the reaction vessel was complete, the mixture in the reaction ...

Embodiment 2

[0093] Embodiment 2: photoresist preparation and processing

[0094] A photoresist composition was prepared by mixing the following amounts of materials:

[0095] 1. Resin component: terpolymer of (2-methyl-2-adamantyl methacrylate / β-hydroxy-γ-butyrolactone methacrylate / cyano norbornyl methacrylate), Based on the total weight of the photoresist composition, its content is 6.79% by weight.

[0096] 2. Photoacid generator compound: tert-butylphenyltetramethylenesulfonium perfluorobutanesulfonate, based on the total weight of the photoresist composition, its content is 0.284% by weight.

[0097] 3. Alkali additive: N-alkylcaprolactam, based on the total weight of the photoresist composition, its content is 0.017% by weight.

[0098] 4. Surfactant: R08 (fluorine-containing surfactant, purchased from Dainippon Ink & Chemicals, Inc.), based on the total weight of the photoresist composition, its content is 0.0071% by weight.

[0099] 5. Additives that cannot be mixed substantiall...

Embodiment 3

[0105] Example 3: Photoresist Preparation and Treatment.

[0106] A photoresist composition was prepared by mixing the following amounts of materials:

[0107] 1. Resin component: terpolymer of (2-methyl-2-adamantyl methacrylate / β-hydroxy-γ-butyrolactone methacrylate / cyano norbornyl methacrylate), Based on the total weight of the photoresist composition, its content is 6.79% by weight;

[0108] 2. Photoacid generator compound: tert-butylphenyltetramethylenesulfonium perfluorobutanesulfonate, based on the total weight of the photoresist composition, its content is 0.284% by weight.

[0109] 3. Alkali additive: N-alkylcaprolactam, based on the total weight of the photoresist composition, its content is 0.017% by weight.

[0110] 4. Surfactant: R08 (fluorine-containing surfactant, purchased from Dainippon Ink & Chemicals, Inc.), based on the total weight of the photoresist composition, its content is 0.0071% by weight.

[0111] 5. Essentially immiscible additives: Isooctyl pol...

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Abstract

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and / or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Description

[0001] Related Application Cross Reference [0002] This application claims priority to US Provisional Application No. 60 / 676762, filed May 1, 2005. technical field [0003] The present invention relates to novel photoresist compositions that are particularly effective for use in immersion lithography processes. Preferred photoresist compositions of the present invention comprise one or more materials that are substantially immiscible with the resinous component of the photoresist. Use of particularly preferred photoresists of the present invention in immersion lithography processes exhibits reduced leaching of photoresist material into immersion fluid in contact with the photoresist layer. Background technique [0004] Photoresists are light-sensitive films used to transfer images to substrates. After the photoresist coating is formed on the substrate, the photoresist layer is exposed to a source of activating radiation through a mask. Some areas of the mask are opaque t...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/004
CPCG03F7/0758G03F7/0757G03F7/0047G03F7/0046G03F7/2041G03F7/0382G03F7/0392B05C17/0103
Inventor D·王
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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