Heat treatment for improving the quality of a taken thin layer

Abstract

A method for forming a structure that includes a layer that is removed from a donor wafer that has a first layer made of a semiconductor material containing germanium. The method includes the steps of forming a weakness zone in the thickness of the first layer; bonding the donor wafer to a host wafer; and supplying energy so as to weaken the donor wafer at the level of the zone of weakness. The zone of weakness is formed by subjecting the donor wafer to a co-implantation of at least two different atomic species, while the bonding is carried out by performing a thermal treatment at a temperature between 300 DEG C. and 400 DEG C. for a duration of from 30 minutes to four hours.

Description

technical field [0001] The present invention relates to a method of forming a structure comprising a layer taken off from a donor wafer comprising a first layer of a germanium-containing semiconductor material prior to liftoff, the method comprising the following Sequential steps: [0002] (a) forming a weakness zone in the thickness of said germanium-containing first layer; [0003] (b) bonding the donor wafer to the host wafer; [0004] (c) providing energy so as to weaken the donor wafer at the level of the region of weakness, the energy provided may result in separation of the peeled layer from the donor wafer at the level of the region of weakness, and thereby peel off the remainder comprising the first layer part of the layer; [0005] (d) Treat the peel layer. Background technique [0006] This type of layer peeling is known as Smart-Cut(R) and is known to those skilled in the art. In particular, detailed information can be found in many published documents, for ...

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Problems solved by technology

In fact, this etching preparation is still necessary to correct the main roughness of the part, which can then lead to an etching which is not uniform enough and which may generate lateral defects or holes in the remaining layers, but also to the final product. free surface is rough

[0025] Also, the presence of defects throughout the thickness of the lift-off layer (not just in the thickness of the defect area) can also lead to non-uniform etching

[0026] But the sequential action of polishing and chemical etching makes the post-detachment polishing step (d) (and the whole sampling method) long, complicated and expensive from an economic point of view

[0027] Of course, it will be appreciated that the problems encountered when performing selective etching are relatively similar to those encountered when performing etching operations during sacrificial oxidation, especially when it comes to resulting in uneven etching

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