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Programmable non-volatile memory device and its forming method

A non-volatile, memory technology, used in transistors, electrical solid state devices, semiconductor devices, etc., can solve the problems of long production cycle, complex process flow, increased production cost, etc., to eliminate patterning and etching steps, improve the process process, the effect of reducing production time and costs

Active Publication Date: 2007-03-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the logic device and the programmable non-volatile memory device are formed on the separate active area part of the semiconductor process wafer at the same time, the increase in the process steps required to form the non-volatile memory cell area leads to a change in the process flow. More complex, resulting in lengthy production cycles and increased production costs

Method used

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  • Programmable non-volatile memory device and its forming method
  • Programmable non-volatile memory device and its forming method
  • Programmable non-volatile memory device and its forming method

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Embodiment Construction

[0056] In order to further explain the technical means and effects adopted by the present invention to achieve the intended purpose of the invention, the following is a specific implementation of the programmable non-volatile memory and its formation method according to the present invention in conjunction with the accompanying drawings and preferred embodiments. Mode, structure, feature and effect thereof are as follows in detail.

[0057] Although the method of the present invention is described based on an example of a programmable non-volatile memory cell, if the method of the present invention is applied to a programmable non-volatile memory device composed of single or multiple transistor cells Even better, the programmable non-volatile memory device includes electronically erasable programmable read-only memory (EEPROM) and flash memory (Flash) devices.

[0058] Referring to FIG. 1A, it shows a semiconductor substrate 10, which is part of the active area of ​​a programm...

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Abstract

A programmable non-volatile memory (PNVM) device and method of forming the same compatible with CMOS logic device processes to improve a process flow, the PNVM device including a semiconductor substrate active area; a gate dielectric on the active area; a floating gate electrode on the gate dielectric; an inter-gate dielectric disposed over the floating gate electrode; and, a control gate damascene electrode extending through a dielectric insulating layer in electrical communication with the inter-gate dielectric, the control gate damascene electrode disposed over an upper portion of the floating gate electrode.

Description

technical field [0001] The present invention relates to a programmable non-volatile memory, such as an electronic erasable programmable read-only memory and a flash memory device, especially a programmable non-volatile memory and an improved A method for forming a programmable non-volatile memory with a process flow. Background technique [0002] In flash memory and EEPROM devices, a floating gate transistor and a control gate are important elements for performing read and write operations. [0003] Prior art processes for forming a memory cell including control gate and floating gate elements typically require a series of complex lithographic patterning and etching processes to form the floating gate, accumulate the interposer thereon, Electrical layer and control gate. For example, in the prior art process, a complex series of steps are required to form the floating gate electrode, followed by the formation of a build-up dielectric layer, followed by the formation of a p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L29/788H01L21/8247H01L21/336H10B69/00
CPCH01L29/66825H01L29/7881H01L29/42324
Inventor 宋弘政徐德训王士玮
Owner TAIWAN SEMICON MFG CO LTD