Programmable non-volatile memory device and its forming method
A non-volatile, memory technology, used in transistors, electrical solid state devices, semiconductor devices, etc., can solve the problems of long production cycle, complex process flow, increased production cost, etc., to eliminate patterning and etching steps, improve the process process, the effect of reducing production time and costs
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[0056] In order to further explain the technical means and effects adopted by the present invention to achieve the intended purpose of the invention, the following is a specific implementation of the programmable non-volatile memory and its formation method according to the present invention in conjunction with the accompanying drawings and preferred embodiments. Mode, structure, feature and effect thereof are as follows in detail.
[0057] Although the method of the present invention is described based on an example of a programmable non-volatile memory cell, if the method of the present invention is applied to a programmable non-volatile memory device composed of single or multiple transistor cells Even better, the programmable non-volatile memory device includes electronically erasable programmable read-only memory (EEPROM) and flash memory (Flash) devices.
[0058] Referring to FIG. 1A, it shows a semiconductor substrate 10, which is part of the active area of a programm...
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