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Organic light-emitting device having improved stability

A device, organic layer technology, applied in the field of top- and bottom-emitting organic light-emitting diodes, which can solve the problem of energy waste

Inactive Publication Date: 2007-03-21
GLOBAL OLED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even though the excess voltage is never used, this supply results in wasted energy

Method used

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  • Organic light-emitting device having improved stability
  • Organic light-emitting device having improved stability
  • Organic light-emitting device having improved stability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] The prior art top-emitting device OLED 1A and the inventive top-emitting device OLED 1B were produced in the same procedure. Whereas the prior art devices were fabricated on glass substrates containing a 60 nm thick pure Ag anode, the OLEDs of the present invention are bilayer anodes. The double-layer anode includes a 60nm thick pure Ag bottom layer and a 6nm thick AgMo alloy surface layer. The concentration of Mo in the surface layer was 20% by volume. Commonly used CF for each substrate deposition x HIL, NPB HTL, AlqEML / ETL and translucent top cathode. The cathode is a 14 nm thick translucent MgAg alloy. The concentration of Ag in the cathode layer was 10% by volume. This OLED structure was selected based on an opaque, totally reflective and single-layer pure Ag anode and optimized for maximum top emission. The device has the following layer structure:

[0080] OLED 1A: Glass(1.1mm) / Ag(60nm) / CF x (1nm) / NPB(45nm) / Alq(60nm) / MgAg(14nm)

[0081] OLED 1B: Glass(1....

Embodiment 2

[0086] The bottom-emitting device OLED 2A of the prior art and the bottom-emitting device OLED 2B of the present invention were prepared in the same coating process. Whereas prior art OLEDs were fabricated on glass substrates containing a 20 nm thick translucent pure Ag anode, the OLED of the present invention is a double layer anode. The double-layer anode is also translucent, consisting of a 15nm thick pure Ag bottom layer and a 6nm thick AgMo alloy top layer. The concentration of Mo in the surface layer was 20% by volume. Commonly used CF for each substrate deposition x Top cathode for HIL, NPB HTL, Alq EML / ETL and total reflection. The cathode was an opaque MgAg alloy 220 nm thick. The concentration of Ag in the cathode layer was 10% by volume. The selection of this OLED structure was based on a semi-transparent, reflective and single-layer pure Ag anode and optimized to maximize bottom emission. The device has the following layer structure:

[0087] OLED 2A: Glass(1....

Embodiment 3

[0093] The bottom-emitting device OLED 3A of the prior art and the top-emitting device OLED 3B of the present invention were prepared in the same coating process. Whereas prior art OLEDs were fabricated on glass substrates containing a 20 nm thick translucent pure Ag anode, the OLED of the present invention is a double layer anode. The double-layer anode of the OLED of the present invention is opaque, including a 75nm thick pure Ag bottom layer and a 10nm thick AgMg alloy surface layer. The concentration of Mg in the surface layer is 50% by volume. Commonly used MoO for each substrate deposition x HIL, NPB HTL and Alq EML / ETL. The cathode of existing device 3A is a 100 nm thick fully reflective LiF / Al layer. The cathode of device 3B was a 14 nm thick translucent MgAg alloy. The concentration of Ag in the cathode layer was 10% by volume. The device has the following layer structure:

[0094] OLED 3A: Glass(1.1mm) / Ag(20nm) / MoO x (2nm) / NPB(200nm) / Alq(60nm) / LiF(0.5nm) / Al(1...

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Abstract

In an OLED device, the improvement including a reflective and conductive bilayer anode including a metal or metal alloy or both; a hole-injecting structure over the reflective and conductive bilayer anode; at least one organic layer formed over the hole-injecting structure; and the reflective and conductive bilayer anode being configured to improve the stability of drive voltage.

Description

field of invention [0001] The present invention relates to top- and bottom-emitting organic light-emitting diodes (OLEDs) using metal electrodes with improved drive voltage stability, manifested in a stable operating voltage over long periods of use. Background of the invention [0002] Organic electroluminescent (OEL) devices, otherwise known as organic light emitting diodes (OLEDs), are used in flat panel display applications. The light-emitting device is attractive because it is designed to produce red, green, and blue light with high luminous efficiency; the device operates at low drive voltages on the order of a few volts, and its light is clearly visible from oblique angles . These unique properties originate from the basic OLED structure comprising a multilayer stack of thin films of small-molecule organic substances sandwiched between an anode and a cathode. Such structures have been disclosed by Tang et al. in commonly assigned US Patent 4,769,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54
CPCH01L2251/5315Y10S428/917H01L51/5271H01L51/5206Y10T428/24942Y10T428/26H10K50/816H10K50/818H10K50/852H10K50/856H10K2102/3026H05B33/26
Inventor P·K·雷乔扈里J·K·马达蒂尔L·-S·廖
Owner GLOBAL OLED TECH
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