Method for preparing ZnO:Al transparent conductive film by direct magnetic control co-sputtering method

A transparent conductive thin film, DC magnetron technology, applied in sputtering coating, ion implantation coating, metal material coating process, etc. It can improve the optical transmittance, easy to form a large-area film, and good thickness uniformity.

Inactive Publication Date: 2007-04-11
LUDONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] ZnO / Al for RF Magnetron Sputtering 2 o 3 Oxide ceramic target, the manufacture of oxide target is troublesome, the cost of the target is high, and the target material cannot be recycled; the DC magnetron reactive sputtering method uses Zn / Al alloy target, and the resistivity of 4.8 can be obtained under the optimal process conditions. ×10 -4 Ωcm and visible light transmittance are close to 90%. Alloy targets are more convenient to manufacture than ceramic targets. However, the nature of metals is easy to oxidize, which determines that alloy targets are easy to poison and affect sputtering coatings. The target cannot be recycled.
The pulsed laser deposition method can produce a resistivity of 6×10 under the optimal process conditions -4 Ωcm and visible light transmittance are close to 85% of the film, but the equipment is expensive, it is difficult to form a large area film; thermal spraying method equipment is simple and cheap, but under the best process conditions, the film conductivity and visible light transmittance are respectively 0.3 ( Ωcm) -1 and 70%; the sol-gel method equipment is simple and cheap, and the film resistivity and visible light transmittance are respectively 2.9×10 under the optimal process conditions. -3 Ωcm and 80%, the photoelectric properties of the film and the thickness uniformity of the spin-coated film are relatively poor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) the metal Zn target of purity 99.99wt.%, diameter 60mm is installed in the water-cooled cathode target groove of the sputtering chamber of DC magnetron sputtering device, and the metal Al sheet of purity 99.99wt.% is attached to Zn target surface , the shape of the Zn target is circular, and the shape of the metal Al sheet is fan-shaped. The effective area of ​​the metal Al sheet accounts for 4 parts, and the effective area of ​​the Zn target accounts for 96 parts. Corning 1737F glass with a thickness of 1.1mm was used as the substrate, soaked in glass washing solution, ultrasonically cleaned in alcohol and deionized water, dried with nitrogen gun, put the cleaned substrate into the substrate holder, and put the substrate The film holder is inserted into the substrate disk in the sputtering chamber, the substrate disk can rotate 0-360°, and the target base distance (the distance between the target and the substrate) is adjusted to 50mm;

[0023](2) Pump up the sput...

Embodiment 2

[0025] The target used for sputtering is the same as in Example 1, except that the substrate temperature in step (2) is 250° C., and other film preparation conditions are the same as in Example 1. The resistivity of the film is 5.2×10 -4 Ωcm, the optical transmittance of the film in the visible light range exceeds 95%, and the film has a polycrystalline structure.

Embodiment 3

[0027] The target used for sputtering is the same as that in Example 1, except that the temperature of the substrate in step (2) is 300° C., and other preparation conditions of the film are the same as in Example 1. The resistivity of the film is 7.3×10 -4 Ωcm, the optical transmittance of the film in the visible light range exceeds 92%, and the film has a polycrystalline structure.

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Abstract

The present invention discloses DC magnetically controlled co-sputtering process for preparing transparent conductive ZnO:Al film in polycrystalline structure on glass substrate. The present invention has sputtering target of separated pure metal zinc target and aluminum target separated by 40-80 mm, basic vacuum lower than 1.0x10<-3> Pa in the sputtering room, sputtering gas of argon, reacted gas of oxygen, gas pressure of 0.5-3 Pa in the sputtering room, argon-to-oxygen flow rate ratio of 4-10, and substrate temperature of 100-300 deg.c. The present invention has low cost, easy target making, capacity of filming in great area, high film quality and other advantages.

Description

(1) Technical field: [0001] The invention relates to a method for preparing a ZnO:Al transparent conductive film, in particular to a method for preparing a ZnO:Al transparent conductive film by a DC magnetron co-sputtering method, and belongs to the technical field of optoelectronic information materials. (two) background technology: [0002] Transparent conductive film is an important optoelectronic information material, which not only has low resistance and high visible light transmittance, but also has excellent film strength and chemical stability. Excellent photoelectric properties make it widely used in the electronics industry. It can be used as a transparent electrode for liquid crystal displays, electroluminescent displays, and amorphous silicon solar cells; it can be used in automobiles, locomotives, airplanes, cold storage, instrumentation, etc. Anti-frost and anti-fog film for visual observation; it is used for computer room, radar shielding protection, etc. by t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/54C23C14/02
Inventor 闫金良李清山孙学卿
Owner LUDONG UNIVERSITY
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