Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Amplifier arrangement for ultra-wideband applications and method

An amplifier and ultra-broadband technology, applied in the parts of amplifying devices, amplifiers with semiconductor devices/discharge tubes, amplifiers, etc., to achieve the effect of reducing the number of

Active Publication Date: 2007-04-18
INFINEON TECH AG
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this contradicts the desired gain flatness for UWB applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amplifier arrangement for ultra-wideband applications and method
  • Amplifier arrangement for ultra-wideband applications and method
  • Amplifier arrangement for ultra-wideband applications and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] Figure 1 shows an amplifier arrangement for ultra-wideband applications UWB. The signal input terminal 1 includes for receiving the input signal V in a pair of terminals and are designed for differential signal processing. An output signal is available at output 2, which is referred to as V out and represents the amplified input signal. The input terminal 1 is connected to the control terminals of two transistors 3, 4 forming a differential amplifier. For this purpose, the source terminals of the transistors 3 , 4 are connected to each other and via a current source 50 to the ground potential terminal Vss. On the drain side, each of the transistors 3, 4 is connected to a cascode transistor 5, 6 at its source terminal. The drain terminals of the cascode transistors 5 , 6 are connected to the output 2 in a symmetrical circuit design. The gate terminals of the cascode transistors 5, 6 are designed to receive a constant bias potential V bias . The transistors 3 , 4 o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An amplifier arrangement for ultra-wideband, UWB, applications and. a method to amplify a UWB signal are presented. A transistor, whose control input forms an input of the arrangement, is connected to a resonant circuit having a controllable resonator frequency. At the resonator circuit, an output of the arrangement is formed. The resonant circuit includes a frequency determining inductance whose value is controllable. By doing this, it is possible to preselect different frequency bands, while achieving the same gain characteristics in each band.

Description

technical field [0001] The present invention relates to amplifier arrangements for ultra-wideband applications, receivers containing such amplifier arrangements, radio frequency mixers, frequency dividers and clock generators, and methods of amplifying ultra-wideband signals. [0002] The ultra-wideband (UWB) standard refers to systems capable of transmitting signals over a wider frequency range than conventional systems. The frequency spectrum occupied by the UWB signal, that is, the bandwidth of the UWB signal is at least 25% of the central frequency. Thus, for example a UWB signal with a center frequency of 2 GHz covers a minimum bandwidth of 500 MHz. The most common technique used to generate UWB signals is to transmit pulses with a pulse duration of less than 1 ns. UWB is also known as non-sinusoidal communication technology. [0003] The first-generation ultra-wideband system allows a frequency bandwidth of 3.1 to 5 GHz, and subsequent generations expand the frequency...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/42H03F3/60H03F3/45H03D7/14H04B1/16
CPCH03B5/1212H03B2200/0078H03J2200/10H03F2200/372H03F2200/294H03F2203/45704H03F3/45188H03J2200/15H03J3/22H03F2203/45638H03B5/1228H03F3/191H03F2200/36H03F2203/45641H03B5/1256H03B2200/0074H03F1/42H03F1/565H03F2203/45726
Inventor R·萨勒诺
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products