Device and method for oriented growth of carbon nanometer tube array

A carbon nanotube array and directional growth technology, applied in the field of nanomaterials, can solve the problems of difficult growth of oriented carbon nanotube arrays, difficult control of reaction parameters, high cost, etc.

Inactive Publication Date: 2007-05-23
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Abstract
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Problems solved by technology

However, the plasma-assisted chemical vapor deposition method requires the additional use of a plasma-generating vacuum system, resulting in a higher cost; the thermal chemical vapor deposition method has the advantages of large growth area and low cost, but it requires strict reaction conditions. It has the disadvantage that the reaction parameters are difficult to control, so it is difficult to achieve the growth of aligned carbon nanotube arrays

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  • Device and method for oriented growth of carbon nanometer tube array
  • Device and method for oriented growth of carbon nanometer tube array
  • Device and method for oriented growth of carbon nanometer tube array

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Embodiment Construction

[0014] The embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0015] Please refer to FIG. 1, which is a schematic diagram of a first embodiment of a device for oriented growth of carbon nanotube arrays, which includes a reaction chamber 1, a DC power supply 2 with a positive electrode 3 and a negative electrode 4, and a device inside the reaction chamber 1. A first metal plate 5 ; a second metal plate 6 ; and a base 8 . Wherein the first metal plate 5 is electrically connected to the positive pole 3 of the power supply 2 by a wire 7; the second metal plate 6 is electrically connected to the negative pole 4 of the power supply 2 by a wire 7, and is connected to the first metal plate 5 are parallel to each other; the base 8 is between the first metal plate 5 and the second metal plate 6 , and the base surface 9 of the base 8 for forming a catalyst is opposite to the second metal plate 6 .

[0016] When...

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Abstract

The invention disclosed a device which can produce direction-located developing carbon nanometer pipe array. The device includes the following parts: one reactor; a cocurrent power supply which has positive pole and negative pole; the first metal plate (located in the reactor) connecting to the positive pole of the power supply; the second metal plate (parallel to the first metal plate) connecting to the negative pole; the basal body between the first and the second metal plate, the surface that can produce catalyst is opposite to the second plate. The invention also disclosed a way to produce carbon nanometer pipe array with the device. The device in the invention demands low cost; besides, it can easily realize the direction-located development of the carbon nanometer pipe array.

Description

【Technical field】 [0001] The invention relates to the technical field of nanometer materials, in particular to a device and method for directional growth of carbon nanotube arrays. 【Background technique】 [0002] Carbon nanotubes are seamless nanoscale cylinders formed by curling single-layer or multi-layer graphite sheets according to a certain helicity. Since the radial direction of carbon nanotubes is subject to the confinement effect of the nanoscale, it is a standard one-dimensional quantum wire. , which can exhibit many quantum mechanical effects; and with the change of the helicity of carbon nanotubes, it can exhibit metallic or semiconducting properties, etc. Due to the unique characteristics of carbon nanotubes, it has broad application prospects in various disciplines. [0003] Traditional carbon nanotube growth methods include arc discharge method, laser evaporation method and chemical vapor deposition method. The arc discharge method uses gas discharge to conve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02
Inventor 董才士
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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