Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Two-dimensional photonic crystal with large absolute band gap

A two-dimensional photonic crystal and square lattice technology, which is applied in crystal growth, laser, single crystal growth, etc., can solve the problems of small choice, difficult application, and difficult preparation

Inactive Publication Date: 2007-06-13
HENAN SHIJIA PHOTONS TECH
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The European Physical Journal B, 2004 also introduced the work of pixel-type two-dimensional photonic crystals, but their design structure must be aimed at anisotropic materials, and the choice of this material is small and greatly restricted
Physical Review B, 2003 also reported the work in this area, and obtained a good result of 20.1%, but because the original cells are too finely divided, 1000×1000=1,000,000, the preparation is difficult, and it is difficult to obtain practical applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-dimensional photonic crystal with large absolute band gap
  • Two-dimensional photonic crystal with large absolute band gap
  • Two-dimensional photonic crystal with large absolute band gap

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0016] As shown in FIG. 1 , the original cell of the two-dimensional photonic crystal, the original cell of the two-dimensional photonic crystal of the present invention is composed of 10×10 square pixels. The black portion 11 represents a high refractive index material, and the white portion 12 represents a low refractive index material. The high refractive index part is made of silicon with a dielectric constant of 11.56; the low refractive index part is made of air with a dielectric constant of 1. The lattice constant a is taken as 1 μm, the pixel, that is, the side length of the square pillar is 100 nm, and the size of the square pillar is 100 nm×100 nm. This structure verifies the rule summed up by people: large absolute bandgap is more likely to appear in the photonic crystal structure in which the distribution of high dielectric m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses regular crystal lattice two-dimension photon crystal with absolute forbidden band at low frequency area under fifth energy level. Primitive cell is divided into square pixel structure with 10*10 high and low refractive index dielectric material distributed in the primitive cell pixel of which 1 represents high refractive index dielectric material; 0 represents low one. The primitive cell structure of the invention satisfies inversion symmetry. When a lattice constant is 1mum, the relative value of the forbidden band under the fifth energy level for silicon / air material is 10.28%.

Description

technical field [0001] The invention relates to a two-dimensional photonic crystal, in particular to a square lattice two-dimensional photonic crystal with a large absolute forbidden band relative value in the low frequency range below the fifth energy level. Background technique [0002] The frequency band gap in photonic crystals due to their periodic structure is called photonic band gap (Photonic Band Gap, PBG). The photonic band gap is an important reason why photonic crystals are widely used. Setting point defects in photonic crystals to form microcavities can obtain high-Q semiconductor lasers; setting line defects to form waveguides can obtain lossless large-angle bending waveguides; photonic crystals can also be used to prepare superprisms, negative refractive index lenses, etc. The larger the forbidden band of photonic crystals, the wider the frequency range of light that can be controlled. Therefore, the search for large forbidden bands has always been a research ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/64H01S5/00
Inventor 龚春娟胡雄伟
Owner HENAN SHIJIA PHOTONS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com