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Low power-consumption reading reference circuit of flash memory in grating

A reference circuit, low-power technology, applied in circuits, electrical components, information storage, etc., to solve problems such as power consumption

Inactive Publication Date: 2007-06-13
INTPROP LIBARARY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this design, the floating gates 10a, 20a are kept at a high level at all times, so that one of the first and second reference memory cells 10, 20 is always on, which will also cause additional power consumption

Method used

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  • Low power-consumption reading reference circuit of flash memory in grating
  • Low power-consumption reading reference circuit of flash memory in grating
  • Low power-consumption reading reference circuit of flash memory in grating

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Embodiment Construction

[0047] Please refer to FIG. 4 , which is a low-power reading reference circuit for split-gate flash memory provided in the first embodiment of the present invention, including a pair of first reference storage unit 40 and second reference storage unit 50, respectively providing their For the read reference current required by the corresponding normal storage unit in the read mode, the number of the first reference storage unit 40 and the second reference storage unit 50 can be a pair or more than one pair, corresponding to a plurality of normal storage units . Wherein the first reference memory unit 40 has a first floating gate 41, a first control gate 42, a first drain 43 and a first source 44; the general structure of the second reference memory unit 50 is similar to that of the first A reference memory cell 40 is the same, having a second floating gate 51 , a second control gate 52 , a second drain 53 and a second source 54 . The first source 44 and the second source 54 ar...

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Abstract

The invention discloses a grid-separated flash memory's low-power read reference circuit, comprising at least a pair of first reference storage unit and second reference storage unit to provide normal storage units of grid-separated flash memory reading reference current, where the first floating grid of the first reference storage unit and the second floating grid of the second reference storage unit are connected to output end of a logic circuit, which can receives at least an external state signal to determine whether the grid-separated flash memory prepares entering into read mode to make the two floating grids switch between an ON state and an OFF state so as to switch on the two reference storage units to make them supply reference current.

Description

technical field [0001] The invention relates to a reading reference circuit of a semiconductor storage element, in particular to a low-power reading reference circuit of split gate flash memory, which can provide fast and stable reference current and has the characteristics of low power consumption. Background technique [0002] Please refer to FIG. 1 , which is a partial layout of a semiconductor structure of a split-gate flash memory, which is composed of several pairs of reference memory cells 1 and 2 . Since the direction and layout of the source 1a, 2a and drain 1b, 2b of each reference memory cell 1, 2 will be different in wafer fabrication, the electrical characteristics of the same pair of memory cells 1, 2 will have slight differences Therefore, a reading reference circuit must be used to provide the reading reference current to solve the problem of electrical characteristics differences between different storage units 1 and 2. If the reading reference circuit canno...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/26H01L27/115H10B69/00
Inventor 张孟凡潘显裕蒯定明周永发
Owner INTPROP LIBARARY
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