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Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost

一种电流限制、P-FET的技术，应用在提供电流限制双向MOSFET开关的制造,经改进的电路结构设计领域，能够解决高功率消耗、低工作效率等问题

Active Publication Date: 2007-06-13
ALPHA & OMEGA SEMICON INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For high power applications, such bidirectional switches often exhibit high power consumption and low operating efficiency and are therefore unacceptable

Method used

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  • Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
  • Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
  • Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost

Examples

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Embodiment Construction

[0021] Refer to FIG. 5A for a circuit diagram of a novel and improved current-limited bidirectional switch implemented with two common-source P-FET transistors to overcome the technical difficulties described above. The current limiting bidirectional power switch 100 includes two common source P-FET transistors 110 and 120 shown as Q1 and Q2 respectively, with a common source node 125 shown. The second P-FET bidirectional function transistor 120 has the function of a sense resistor, Rs shown in FIG. 4A . The voltage drop across P-FET transistor 120 is sensed by amplifier 130 shown as Al. The voltage drop across the P-FET transistor 120 is represented by the value of Iload×Rdson2, where Iload is the current flowing through the load 140 and Rdon2 is the resistance between the source and drain of the second P-FET transistor 120 . The voltage drop across the P-FET transistor 120 is compared to the current limit voltage Vlim150 implemented to prevent the current from exceeding the...

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PUM

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Abstract

A circuit and method for controlling a MOSFET based switch that includes two back-to-back FET to block current flow in the OFF state irrespective of the polarity of the voltage differential across the switch. The MOSFET based switch further has a built-in current limit function by sensing the current flow through one of the two MOSFET switches. Furthermore, the bilateral current-limited switch further includes circuitry required for controlling both P type and N type FET in either common drain or common source configuration.

Description

technical field [0001] The invention disclosed herein relates generally to the circuit design and construction of power MOSFET based devices. More particularly, the present invention relates to a novel and improved circuit design and method of manufacture providing a current limiting bidirectional MOSFET switch. Background technique [0002] Conventional techniques and circuit designs for current-limited bidirectional switches implemented with FET-based transistors are still limited by the technical challenges of high switch resistance and inability to implement them in devices requiring higher power efficiency. As discussed in further detail below, the combination of circuits employed that can act as a bidirectional switch while also limiting current often inadvertently increases switch resistance. An increase in switch resistance inevitably leads to the undesired effects of wasting power, loss of efficiency and heat generation. Therefore, this technical problem limits th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H01L29/66
CPCH02H9/025H03K17/0822H03K17/6874H03K2217/0036
Inventor 张艾伦韦志南
Owner ALPHA & OMEGA SEMICON INC
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