Electrically rewritable non-volatile memory element and method of manufacturing the same

Abstract

A non-volatile memory element includes a lower electrode, an upper electrode, a recording layer arranged between the lower electrode and the upper electrode and containing a phase change material, and a bit line directly arranged on the upper electrode. The bit line is formed to be offset to the recording layer. With this arrangement, a contact area between the recording layer and the upper electrode and a contact area between the upper electrode and the bit line can be reduced without providing an interlayer insulation film between the upper electrode and the bit line. Thus, heat radiation to the bit line can be suppressed while the upper electrode and the bit line are connected without using a through-hole.

Description

technical field [0001] The present invention relates to an electrically rewritable nonvolatile memory element and a method of manufacturing the same. More specifically, the present invention relates to an electrically rewritable nonvolatile memory element having a recording layer comprising a phase change material and a method of manufacturing the same. Background technique [0002] Personal computers and servers alike use hierarchical storage devices. There are lower-tier memories that are cheap and provide high storage capacity, and memories higher than that can provide high-speed operation. The lowest level usually consists of magnetic storage such as hard disks and tapes. In addition to non-volatile memory, magnetic memory is an inexpensive way to store information that is much larger than solid-state devices such as semiconductor memory. However, compared to the sequential access operation of magnetic memory, semiconductor memory is faster and can randomly access the...

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Problems solved by technology

As a result, heat radiation to the bit line increases, which greatly reduces thermal efficiency

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