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Thin film transistor array panel and manufacturing method thereof

A technology of thin film transistors and array boards, which is applied in the manufacture of transistors, semiconductor/solid-state devices, and electric solid-state devices, etc., can solve the problems of increasing production costs and complex manufacturing processes.

Pending Publication Date: 2007-07-04
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An additional photolithographic etch step is recommended to remove the Al-containing metal upper layer, however, this leads to complex fabrication processes and increased production costs

Method used

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  • Thin film transistor array panel and manufacturing method thereof
  • Thin film transistor array panel and manufacturing method thereof
  • Thin film transistor array panel and manufacturing method thereof

Examples

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Embodiment Construction

[0073] The invention will be described in more detail below with reference to the accompanying drawings showing preferred embodiments of the invention. However, the invention can also be embodied in many different forms and the invention is not limited to the described embodiments.

[0074] In the drawings, layer thicknesses, films, substrates, regions, etc. are exaggerated for clarity. The same reference numerals refer to the same elements throughout. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is said to be "placed directly on" another element, no intervening elements are present.

[0075] Now, a thin film transistor array panel including a contact structure and a manufacturing method thereof according to an embodiment of the present invention will be described with referen...

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Abstract

The invention discloses a film transistor array plate and its making method. Gate lines are formed on a substrate. A gate insulating layer, a semiconductor layer, an intrinsic a-Si layer, an extrinsic a-Si layer, a lower film of Cr and an upper film of Al containing metal are sequentially deposited, and the upper film and the lower film are patterned to form data lines and drain electrodes. A photoresist is formed, and the upper film is patterned using the photoresist as an etch mask to expose contact portions of the lower film of the drain electrodes. Exposed portions of the extrinsic a-Si layer and the intrinsic a-Si layer are removed, and then the photoresist and underlying portions of the extrinsic a-Si layer are removed. A passivation layer is formed and patterned along with the gate insulating layer to form contact holes exposing the contact portions of the lower film, and pixel electrodes are formed to contact the contact portions.

Description

[0001] This application is a divisional application of No. 03151498.7 patent application for invention submitted on July 19, 2003. technical field [0002] The invention relates to a thin film transistor array board and a manufacturing method thereof, in particular to a thin film transistor array board used for a liquid crystal display and a manufacturing method thereof. Background technique [0003] Liquid crystal displays (LCDs) are among the most widely used flat panel displays. A liquid crystal display includes two substrates provided with field generating electrodes and a liquid crystal layer (LC) sandwiched between the two substrates. The liquid crystal display displays images by applying voltage to the field generating electrodes to generate an electric field in the liquid crystal layer, and the electric field determines the orientation of liquid crystal molecules in the liquid crystal layer to adjust the polarization of incident light. [0004] Among liquid crystal ...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768G02F1/1362H01L29/786
CPCG02F1/13458G02F1/136227G02F1/136286G02F1/13629G02F1/136295H01L27/124
Inventor 金东奎金相洙
Owner SAMSUNG ELECTRONICS CO LTD
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