Method for manufacturing a cmos image sensor
An image sensor and device isolation technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems such as dark current generation, increase in crosstalk phenomenon, and changes in light receiving characteristics
Inactive Publication Date: 2007-07-04
DONGBU ELECTRONICS CO LTD
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[0034] However, since the width of the diffusion region 67 is wide, the light receiving characteristics of the photodiode corresponding to red or long wavelengths vary depending on the depletion region 69
In addition, since the second conductivity type low-concentration diffusion region 67 is directly adjacent to the device isolation film 63, defects may be generated between the second conductivity type low-concentration diffusion region 67 and the device isolation film 63, thereby generating dark current.
[0035] In addition, there is a problem that the crosstalk phenomenon between the second conductivity type low-concentration diffusion region 67 and adjacent pixels increases.
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[0045] A CMOS image sensor and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to the accompanying drawings.
[0046] 4A to 4C are cross-sectional views illustrating a manufacturing process of a CMOS image sensor according to an embodiment of the present invention.
[0047] Referring to FIG. 4A , an epitaxial layer 162 is formed on a first conductivity type semiconductor substrate 161 through an epitaxial process. The epitaxial layer 162 may be of the low-concentration first conductivity type.
[0048] Active regions and device isolation regions are defined in the semiconductor substrate 161 . In one embodiment, the device isolation film 163 may be formed in the device isolation region using an STI process. In a specific embodiment, the device isolation film 163 may be formed to a depth of 0.4-0.5 μm.
[0049] A method of forming the device isolation film 163 will be described below.
[0050] Fir...
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A CMOS image sensor is provided. The CMOS image sensor includes: a photodiode region formed in an active region of a substrate; a transistor formed on a transistor region of the active region of the substrate; a low-concentration diffusion region formed on the photodiode region while being spaced apart from a device isolation region of the substrate; a high-concentration diffusion region formed in the low-concentration diffusion region; and a floating diffusion region formed in a drain region of the transistor.
Description
[0001] This application claims priority from Korean Patent Application No. 10-2005-0132682 filed on December 28, 2005, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a CMOS image sensor and a manufacturing method thereof. Background technique [0003] An image sensor is a semiconductor device used to convert an optical image into an electrical signal, and is generally classified as a charge-coupled device (CCD) or a CMOS image sensor. [0004] In the CCD, a plurality of photodiodes (PDs) for converting light into electrical signals are arranged in a matrix. [0005] In addition, the CCD includes: a plurality of vertical charge-coupled devices (VCCDs), which are vertically arranged between the photodiodes in the matrix to transfer charges in the vertical direction when the photodiodes generate charges; a plurality of horizontal charge-coupled devices ( HCCD) to transfer charges transferred from the...
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IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14689H01L27/1463H01L27/146
Inventor 任劲赫
Owner DONGBU ELECTRONICS CO LTD