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Semiconductor device

A semiconductor and functional surface technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problem of large installation area and achieve the effect of easy confirmation

Active Publication Date: 2007-07-04
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] In addition, if a plurality of semiconductor chips 72 are to be mounted on a mounting substrate using the semiconductor device 71 shown in FIG.

Method used

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  • Semiconductor device
  • Semiconductor device
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Embodiment Construction

[0067] FIG. 1 is a diagrammatic sectional view showing the structure of a semiconductor device according to a first embodiment of the present invention. Figure 2 is a diagrammatic bottom view thereof. This semiconductor device 1 is a so-called chip size package (CSP), and includes a semiconductor chip 2 .

[0068] A functional element 2 a is formed on one surface (functional surface 2F) of the semiconductor chip 2 . The functional element 2a is, for example, a transistor. The insulating film 4 covering the functional element 2a is formed on the functional surface 2F. An opening 4 a exposing the electrode of the functional element 2 a is formed in the insulating film 4 .

[0069] Over the insulating film 4, a rewiring 5 electrically connected to an electrode in the functional element 2a via the opening 4a is formed. Furthermore, a protective resin layer 12 is formed on the insulating film 4 so as to cover the rewiring 5 . The side surfaces 2S of the semiconductor chip 2 an...

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Abstract

There are provided semiconductor devices (1, 1A, 21, 31, 41, 51) including a first semiconductor chip (3) having a first function surface (3F) where a first function element (3a) is formed; a protection resin layer (12) formed on the first function surface; bottom exposing surfaces (10B, 19BB) formed on the periphery of the first function surface and exposed from a bottom surface (12B) located at the side opposite to the first function surface side of the protection resin layer; side exposing surfaces (10S, 19BS) exposed from the side surface (12S) of the protection resin layer; and external connection terminals (10, 19, 52) for electrical connection with outside.

Description

technical field [0001] The present invention relates to a semiconductor device having almost the same size as a semiconductor chip. Background technique [0002] In recent years, miniaturization and high mounting density are required for semiconductor devices. As a semiconductor device satisfying such a requirement, there is a chip scale package (CSP, Patent Document 1 below) or a multi-chip module (MCM, Patent Document 2 below). [0003] 12 is a schematic cross-sectional view showing the structure of a conventional semiconductor device having a chip-scale package structure. [0004] The semiconductor device 71 includes a semiconductor chip 72 . A functional element 72 a is formed on one surface of the semiconductor chip 72 , and an insulating film 73 is formed to cover the functional element 72 a. An opening 73 a exposing the electrode of the functional element 72 a is formed in the insulating film 73 . [0005] A rewiring 74 of a predetermined pattern is formed on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/12
CPCH01L24/10H01L23/3114H01L2924/19043H01L2924/01004H01L2924/01079H01L24/48H01L25/0657H01L2225/06551H01L2225/06527H01L2224/48227H01L2225/06513H01L2924/01033H01L2924/01005H01L2924/15311H01L2924/01006H01L2224/32145H01L2924/01029H01L2224/13099H01L2924/01074H01L2924/01078H01L2924/01075H01L2224/48091H01L2924/014H01L2224/73265H01L2225/06582H01L2224/32225H01L24/13H01L2924/181H01L2224/13H01L2224/05548H01L2224/05573H01L2924/00014H01L2224/02377H01L2924/00H01L2224/05599H01L2924/00012H01L2224/45099H01L2224/45015H01L2924/207H01L23/12
Inventor 谷田一真樋口晋吾门口卓矢
Owner ROHM CO LTD