Apparatus for controlling galvanic corrosion effects on a single-wafer cleaning system

Abstract

A single substrate cleaning apparatus that prevents galvanic corrosion is provided. The apparatus includes a spindle configured to rotatably support a substrate. A moveable dispense arm disposed over the spindle is included. The dispense arm supports a first supply line and a second supply line. The first supply line has a first nozzle affixed to an end of the first supply line, and the second supply line has a second nozzle affixed to an end of the second supply line. The first nozzle is positioned behind the second nozzle such that a fluid dispensed from the second nozzle is dried by application of a fluid simultaneously dispensed from the first nozzle in manner that protects the substrate from galvanic corrosion.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional application of U.S. patent application Ser. No. 10 / 013,211, filed on Dec. 7, 2001, and entitled “METHOD FOR CONTROLLING GALVANIC CORROSION EFFECTS ON A SINGLE-WAFER CLEANING SYSTEM,” which claims priority from U.S. Provisional Patent Application No. 60 / 305,372 filed Jul. 13, 2001 and entitled “Drying substrate using a combination of substrate processing techniques.” Each of these applications is herein incorporated by reference in their entirety for all purposes.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The invention relates generally to semiconductor manufacturing and more specifically to a cleaning method and apparatus for a single-wafer cleaning system, which minimizes galvanic corrosion. [0004] 2. Description of the Related Art [0005] Galvanic corrosion is induced in an environment where two dissimilar metals are coupled through an electrolyte. One of the metals in the galva...

AI Technical Summary

Benefits of technology

The present invention provides an apparatus and method for quickly removing cleaning chemistry from a semiconductor substrate to prevent corrosion. The method involves applying a cleaning chemistry containing corrosion inhibitors to the substrate, exposing the substrate to the cleaning chemistry for a period of time, and then removing the cleaning chemistry with a rinsing agent and a drying agent. The invention also includes a system for cleaning a single substrate by spinning the substrate and applying cleaning chemistry and rinsing agent simultaneously to remove the chemistry. The invention prevents galvanic corrosion and ensures a concentration gradient at the interface between the cleaning chemistry and the substrate surface, reducing exposure to corrosion.

Problems solved by technology

The surfactant of the cleaning chemicals for the single-wafer cleaning operations are formulated to help improve wetting of difficult-to-access features such as vias and contacts, and also to control galvanic effects where necessary, however, if the surfactant is diluted then its passivation capacity is reduced or inhibited, thereby leaving the substrate more vulnerable to galvanic corrosion effects.

The galvanic corrosion may occur within the first few seconds of rinsing, where the cleaning chemistry and the surfactant are initially diluted upon rinsing of the cleaning chemistry.

Since the surfactant concentration is modified by dilution through rinsing, the semiconductor substrate is vulnerable to corrosion when the diluted surfactant concentration is insufficient to inhibit corrosion.

As mentioned above, the effects of corrosion, especially galvanic corrosion, can occur within seconds.

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