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Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device

a technology for polishing workpieces and semiconductor devices, applied in the direction of manufacturing tools, grinding machines, lapping machines, etc., can solve problems such as providing uneven surface conditions of wafers, and achieve the effects of improving polishing rate, high polishing accuracy, and high reliability

Inactive Publication Date: 2005-06-23
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The patent text describes a problem in polishing wafers where there is a higher polishing rate in the periphery of the wafer compared to the central portion. This results in an uneven surface condition. The technology disclosed in the patent text addresses this problem by providing a polishing pad with compressible contacts in the periphery of the wafer, but this requires a new type of polishing pad that is complicated and expensive to manufacture. The patent text proposes a solution that can be applied to both wafers of different sizes and can achieve a uniform polishing condition."

Problems solved by technology

Although the technology disclosed in Japanese Patent No. 3,042,593 allows uniformly increasing and decreasing the polishing rate for the entire wafer, it may be difficult to prevent to generate a region for presenting higher polishing rate and a region for presenting lower polishing rate within the wafer, thereby providing uneven surface condition of the wafer, as shown in FIG. 15B and FIG. 16.

Method used

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  • Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device
  • Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device
  • Method for polishing workpiece, polishing apparatus and method for manufacturing semiconductor device

Examples

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first embodiment

[0089]FIG. 1A and FIG. 1B present schematic diagrams, showing a configuration of a polishing apparatus according to the present embodiment. FIG. 1A is a cross-sectional view of the polishing apparatus. FIG. 1B is a plan view, showing a polishing pad 2, a slurry feeder 7, a carrier 4 and a wafer 3 sustained on the polishing apparatus shown in FIG. 1A. The polishing apparatus shown in FIGS. 1A and 1B will be described. Basic configuration of this polishing apparatus is substantially the same as the conventional apparatus. More specifically, the polishing pad (abrasive cloth) 2 is put on a rotatable table 1, and the carrier 4 for maintaining the wafer (workpiece) 3 is provided so as to face against the polishing pad 2. Further, the slurry feeder 7, which is capable of dropping an abrasive material (slurry) 8 (see FIG. 11) is provided above the polishing pad 2. An illustrative example thereof may be that the table 1 is a circular member having a diameter of about 500 mm, and is capable ...

second embodiment

[0106] A second embodiment according to the present invention will be described as follows in reference to FIG. 4. Here, an identical numeral is assigned to a same element appeared in the first embodiment, and the detailed description thereof is not presented.

[0107] In the first embodiment, the region B being free of groove 2a provided in the central portion of the polishing pad 2, and the slurry dropping position is located outside of the region B of the polishing pad 2 being free of the groove 2a. However, in the present embodiment, slurry dropping position is not particularly limited. Since the slurry 8 generally moves from the inner side of the polishing pad 2 toward the outer portion by the centrifugal force and cannot move toward the inner direction, the slurry feeder 7 extends to the interior of the region B being free of groove 2a as shown in FIG. 4, and even if the configuration, in which the slurry 8 is dropped in the region B, is employed, the slurry 8 cannot remain in t...

third embodiment

[0108] A third embodiment according to the present invention will be described as follows in reference to FIG. 5. Here, an identical numeral is assigned to a same element appeared in the first and the second embodiments, and the detailed description thereof is not presented.

[0109] In the first embodiment, the region B being free of groove 2a is provided in the central portion of the polishing pad 2. On the other hand, grooves 2a are formed over the entire surface of the polishing pad in the present embodiment. However, the slurry dropping position is disposed at a position outer from the central portion by a predetermined distance similarly as in the first embodiment, or in other words, at a position outer than the region that is desirable to have reduced polishing rate. Even if the grooves 2a exist in the central portion of the wafer 3, the slurry 8 moves from the inner side of the polishing pad 2 to the outer side thereof by a centrifugal force, and cannot move toward the inner s...

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Abstract

A region free of groove is provided in a central portion of a polishing pad, and a region having grooves formed thereon is provided on the outer portion thereof. A retainer ring surrounds and sustains a circumference portion of the wafer, and a part that tends to provide higher polishing rate, which is adjacent to the retainer ring in the circumference portion, is disposed so as to face against the region free of the groove. Then, while pressing the wafer against the polishing pad, these are rotated in the same direction. Then, a slurry is supplied from a slurry feeding unit to the outer portion of the region free of groove. Since substantially no slurry is supplied in the region free of groove, the polishing rate is reduced there, and thus a uniform polishing rate over the entire wafer is provided.

Description

[0001] The present application is based on Japanese Patent Application NO. 2003-419532, the whole disclosure of which is hereby incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a method for polishing a workpiece and a polishing apparatus, and also generally relates a method for manufacturing a semiconductor device. [0004] 2. Related Art [0005] When a reflow process, an application process such as a spin on glass (SOG) process, or an etch back process, for example, is conducted for planarizing a wafer within a process for manufacturing a semiconductor device including a wafer composed of silicon or the like, it is difficult to planarize over the wider region of the surface of the wafer. Such difficulty may be a considerable barrier for the manufacturing process for the semiconductor device. In such circumstances, a chemical mechanical polishing (CMP) process, which provides a polishing of the surface of th...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B37/00B24B37/20B24B37/26H01L21/304
CPCB24B37/042B24B37/30B24B37/20
Inventor MIYAKE, KOZUESUGAI, KAZUMI
Owner NEC ELECTRONICS CORP