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Pixel structure and exposure method thereof

a liquid crystal display and pixel technology, applied in non-linear optics, instruments, optics, etc., can solve the problems of large demand for tft-lcd, inability to control the process parameter value about the environment to keep the same, and often generated shot mura defects between any two adjacent masks, so as to improve the abrupt image change situation and not reduce the display quality

Inactive Publication Date: 2005-07-07
HANNSTAR DISPLAY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a pixel structure and exposure method for a liquid crystal display that reduces the impact of exposure in different regions of the panel. This is achieved by dividing devices that may affect the optical characteristics of a pixel region into two groups and applying the same photolithography process to both groups. This results in a pixel region that presents an average optical characteristic of its adjacent pixel regions, improving abrupt image change situations. Additionally, a buffer region is built into the pixel region to further enhance display quality.

Problems solved by technology

The demands for TFT-LCD tend to be large in scale.
However, even though the process parameter value about machine can be controlled in the same situation, it is impossible to control the process parameter value about environment to keep the same.
Therefore, a shot mura defect is often generated between any two adjacent masks.
Therefore, when a large scale LCD panel is divided into several regions for respectively performing photolithography process, an abrupt image difference is generated if the process parameters between regions are different.
However, the two methods require exact alignment; otherwise, the display an image will be affected.

Method used

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first embodiment

[0034] The first embodiment of the present invention is to form several switching transistors in a pixel region. On the other hand, the linking region of two masks of photolithography process rounds is aligned to between switching transistors. Therefore, the photolithography process for forming each switching transistor is respectively performed. In other words, the switching transistors located in the two sides of the linking region are formed by different photolithography process rounds. The different photolithography process rounds can make the switching transistors have different process parameters. The pixel region is controlled by the two switching transistors. Therefore, the pixel region's optical characteristic is also affected by the two switching transistors. In other words, the optical characteristic of the linking region is determined by the switching transistors located in the two sides of the linking region. The optical characteristic difference in the linking region c...

second embodiment

[0045] The second embodiment of the present invention forms several storage capacitors in a pixel region. On the other hand, the linking region of two masks of photolithography process rounds is aligned to this region among the storage capacitors. Therefore, the photolithography process for forming each pixel capacitor is respectively performed. In other words, the pixel region of the second embodiment is also controlled by a switching transistor; however, the storage capacitors are formed by different photolithography process rounds. The different photolithography process rounds provide the storage capacitors with different process parameters. Therefore, the pixel region's optical characteristic is also affected by the storage capacitors. In other words, the optical characteristic of the linking region is determined by the storage capacitors located on the two sides of the linking region. The optical characteristic difference in the linking region can be released by the process par...

third embodiment

[0056] The third embodiment of the present invention forms several storage capacitors in a pixel region. On the other hand, the linking region of two masks of photolithography process rounds is aligned to this region among the storage capacitors. Therefore, the photolithography process for forming each pixel capacitor is respectively performed. The main point of difference with the second embodiment is that the storage capacitor is composed of a scan electrode and the pixel electrode in the third embodiment. Similarly, the pixel region in the third embodiment is also controlled by a switching transistor. The overlapping region of the pixel electrode and the scan electrode is divided. Therefore, the storage capacitor includes two parts in a pixel region. The two parts are formed by different photolithography process rounds.

[0057]FIG. 5A illustrates a schematic top view diagram of a pixel region of a liquid crystal display in accordance with the third embodiment of the present invent...

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Abstract

The present invention provides a pixel structure and exposure method thereof. This present invention divides these devices that influence the optical characteristic of the pixel region into two parts. Each part is located in a sub-pixel region of the pixel region. Different photolithography process rounds are performed in the different sub-pixel regions.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a liquid crystal display (LCD) structure, and more particularly to a pixel structure of a liquid crystal display. BACKGROUND OF THE INVENTION [0002] Liquid crystal displays (LCD) have been widely applied in electrical products, such as digital watches, calculator, etc. for a long time. Moreover, with the advance of techniques for manufacture and design, thin film transistor-liquid crystal display (TFT-LCD) has been introduced into portable computers, personal digital assistants, and color televisions, as well as gradually replacing the CRT used for conventional display. The demands for TFT-LCD tend to be large in scale. [0003] The typical size of a mask used in the photolithography process is much less than the size of the panel of a liquid crystal display. Therefore, a same photolithography process step has to apply to different regions in the panel. However, even though the process parameter value about machine can be ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G02F1/1343G02F1/1362
CPCG02F1/136213G02F2001/13625G02F1/13624G02F1/13625
Inventor SHIH, PO-SHENGLEE, SEOK-LYUL
Owner HANNSTAR DISPLAY CORPORATION