He treatment to improve low-K adhesion property

a technology of adhesion property and treatment method, which is applied in the manufacturing of basic electric elements, semiconductor/solid-state devices, electrical equipment, etc., can solve the problems of poor adhesion and reliability concerns, and achieve the effect of improving the adhesion of dielectric films
US20050170663A1Active Publication Date: 2005-08-04CHARTERED SEMICONDUCTOR MANUFACTURING
7 Cites 4 Cited by

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
CHARTERED SEMICONDUCTOR MANUFACTURING
Publication Date
2005-08-04

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer wherein there is good adhesion between the low dielectric constant material layer and the overlying layer.
Need to check novelty before this filing date? Find Prior Art

Description

BACKGROUND OF THE INVENTION

[0001] (1) Field of the Invention

[0002] The invention relates to the use of low dielectric constant materials in the fabrication of integrated circuits, and more particularly, to a method of improving adhesion of low dielectric constant materials to overlying materials in the manufacture of integrated circuits.

[0003] (2) Description of the Prior Art

[0004] Low dielectric constant materials, having a dielectric constant (k) of less than about 3.1, are preferably used in the fabrication of integrated circuits to reduce capacitance. An integration challenge facing processes incorporating low dielectric constant materials is the adhesion of these low dielectric constant materials to overlying layers. Poor adhesion is a cause for reliability concerns. A plasma treatment can be used on a low-k dielectric material layer to improve its adhesion property. It is necessary to prevent or minimize damage to the low-k material caused by the plasma treatment.

[0005] U...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More