38 results about "Helium plasma" patented technology

A fabricating method of a thin film transistor substrate according to the present invention includes the steps of forming on a substrate material a thin film transistor array including a plurality of signal lines; forming an organic insulating film on the substrate material on which the thin film transistor array has formed; patterning the organic insulating film; performing a surface treatment on a surface of the organic insulating film using helium plasma; and forming a transparent electrode layer on the organic insulating film.

An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising:(A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and(B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis / condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising: (A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and (B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis / condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

An adjusting method for a discharge ionization current detector of the present invention is provided for a discharge ionization current detector for a gas chromatograph, which improves the precision and reproducibility of measurements results of the detector. The discharge ionization current detector adjusts at least one of purity of introduced helium gas, a flow rate of the introduced helium gas, an amplitude of voltage of the low-frequency dielectric barrier discharge, and a frequency of the voltage of the low-frequency dielectric barrier discharge so that intensity of light having a wavelength of 640 nm reaches the maximum in a range of wavelengths of 250 to 700 nm with respect to light emitted by the helium plasma.

The invention provides a method for forming a crystal silicon film. The method comprises the following steps: providing a substrate, and forming a first silicon structure film (such as a noncrystalline silicon film) on the substrate; modifying the first silicon structure film to form a seed crystal layer, wherein the modification comprises a hydrogen plasma processing and a helium plasma processing; and directly forming a second silicon structure film (such as a microcrystalline silicon film) on the seed crystal layer. The method has the advantages of lower cost and higher quality due to the modification comprising the hydrogen plasma processing and the helium plasma processing.

A semiconductor device and method for manufacturing the same are provided. The method includes providing a semiconductor substrate, forming a porous low-k dielectric layer on the semiconductor substrate, forming a through-hole and a trench of a copper interconnect structure, performing a helium plasma treatment on an exposed surface of the porous low-k dielectric layer, performing a nitrogen plasma treatment on the exposed surface of the porous low-k dielectric layer to form a silicon nitride layer, performing an argon plasma treatment on the silicon nitride layer, and forming a diffusion barrier layer on bottoms and sidewalls of the through-hole and the trench of the copper interconnect structure. Through the successive helium, nitrogen and argon plasma treatments, the low-k dielectric layer has a smooth and dense surface that increases the adhesion strength between the low-k dielectric layer and the diffusion barrier layer to improve reliability and yield of the semiconductor device.

We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.

The invention discloses a high-temperature-edible-oil-resistant silicone rubber blend and a preparation method thereof. The blend comprises the raw materials of, by mass, 100 parts of silicone rubber, 40-60 parts of silica, 4-10 parts of silicone oil, 10-50 parts of surface-modified polytetrafluoroethylene (PTFE) micro-powder, and 1.5-5.0 parts of di-tert-butyl hexane peroxide. The surface-modified polytetrafluoroethylene micro-powder is obtained through the following steps: PTFE micro-powder is subjected to a surface photo-etching treatment by using a vacuum ultraviolet radiation source generated by helium plasma; and the etched PTFE micro-powder is exposed in the atmosphere for more than 10min, such that the surface-modified polytetrafluoroethylene micro-powder is obtained. The silicone rubber blend provided by the invention has high mechanical property retention rate in high-temperature edible oils. VOC discharge meets environment protection requirements. The blend has a simple preparation process, and is non-toxic and pollution-free. The blend can be used as a plastic or metal frame coating material of a high-temperature-edible-oil-resistant silicone rubber kitchenware product.

The invention discloses a dentin bonding strength improving method. The dentin bonding strength improving method specifically comprises the following steps of, after tooth preparation is completed, etching the surface of dentin with etching agent for 15 seconds, then rinsing teeth with flowing water, wipe-drying the teeth, and spray-brushing the surface of the teeth through helium plasma jet flowfor 5 seconds, wherein the specific parameters of spray-brushing comprises regulating the input voltage of a high-voltage power source to be 20 V, current to be 0.6 A and helium flow to be 3L / min; moisturizing the surface of the teeth with a wet dust-free tissue, applying bonding agent, and after the bonding agent is cured for 10 seconds, piling resin. The dentin bonding strength improving methodcontrols the parameters of low-temperature and normal-pressure plasma production within the temperature range acceptable for the teeth, so that a bonding interface can be in contact with low-temperature and normal-pressure plasma jet flow continuously for a sufficient time period to achieve the effects of improving the bonding strength.

A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer wherein there is good adhesion between the low dielectric constant material layer and the overlying layer.

Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200 DEG C and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250 DEG C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 angstroms, and is used as a hard mask layer during etching of otherlayers on a semiconductor substrate.

The invention discloses a silicon heterojunction solar cell and a hydrogenated amorphous-silicon i membrane surface processing method thereof. Plasma treatment is carried out on a hydrogenated amorphous-silicon i membrane surface by using hydrogen-argon mixed gas or hydrogen-helium mixed gas; and thus the hydrogenated amorphous-silicon i membrane surface is cleaned well by using argon or helium plasma in a physical manner and the number of the hydrogen plasma is increased, so that the passivation and cleaning effects for the hydrogenated amorphous-silicon i membrane surface are enhanced. Meanwhile, because the hydrogenated amorphous-silicon i membrane surface is damaged slightly during the physical bombardment process of the argon or helium plasma, the hydrogen plasma is capable of not only realizing a passivation effect on the hydrogenated amorphous-silicon i membrane surface but also repairing the slight damage. On the basis of the synergistic effect of the hydrogen-argon mixed gas or hydrogen-helium mixed gas, the good passivation and cleaning effects for the hydrogenated amorphous-silicon i membrane surface are realized, so that the battery performance is enhanced.

The invention provides a helium ionization detector and a preparation method thereof. The helium ionization detector comprises a substrate, an excitation electrode pair, gas inlet pipes, a bias electrode and a collection electrode; a cavity is formed in the substrate, the cavity comprises an excitation electrode channel, an air inlet channel and an air outlet channel, the excitation electrode channel and the air outlet channel are communicated to form a first intersection area, and the air inlet channel and the air outlet channel are communicated to form a second intersection area; an excitation electrode region of the excitation electrode pair is positioned in the first intersection area; the gas inlet pipes are a first gas inlet pipe and a second gas inlet pipe which have the same morphology and are oppositely arranged, and can provide auxiliary carrier gas and sample carrier gas with the same pressure intensity for the second intersection area; the bias electrode and the collection electrode are located in the air outlet channel and arranged on the outer side of the second intersection area away from the first intersection area. According to the invention, a high-pressure quasi-zero flow velocity region can be formed in the cavity, helium plasma excitation is facilitated, the helium flow velocity in the area is extremely low, helium plasma groups can be stabilized, and then baseline noise can be reduced.