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Passivation method of semiconductor device

A semiconductor and device technology, applied in the field of passivation of semiconductor devices, can solve the problems of over-cleaning and incomplete cleaning, and different oxidation degrees of the cavity surface of the bar, so as to achieve uniform thickness and avoid different effects of cleavage time

Active Publication Date: 2021-04-30
度亘激光技术(苏州)有限公司
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Problems solved by technology

[0004] The purpose of the present invention is to provide a passivation method for semiconductor devices, so as to alleviate the uneven oxidation degree of the cavity surface of the naturally cleaved bar, and there are technical problems of over-cleaning and incomplete cleaning of the cavity surface of the bar

Method used

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  • Passivation method of semiconductor device

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Embodiment

[0028] Such as figure 1 As shown, a kind of passivation method of semiconductor device provided by the present invention comprises the following steps:

[0029] S1: Put the cleaved bars (bars) into the chamber for oxidation treatment;

[0030] S2: Vacuumize, turn on the hydrogen source and use the formed hydrogen plasma to clean the cavity surface of the bar;

[0031] S3: After turning off the hydrogen source, turn on the helium source and use the formed helium plasma to clean the cavity surface of the bar;

[0032] S4: After the cleaning treatment, passivation treatment is performed on the cavity surface of the bar while keeping the helium gas source turned on and forming a helium plasma.

[0033] In the passivation method of the semiconductor device provided by this embodiment, before the bar is cleaned, the bar is oxidized in an oxygen environment, so that the thickness of the oxide layer on the cavity surface of the bar can be made uniform, and the bar can be avoided Cl...

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Abstract

The invention provides a passivation method of a semiconductor device, and relates to the technical field related to semiconductors, and the passivation method of the semiconductor device comprises the following steps: putting a cleaved bar into a chamber for oxidation treatment; vacuumizing, cleaning the cavity surface of the bar by using the formed hydrogen plasma, and cleaning the cavity surface of the bar by using the formed helium plasma; after the cleaning treatment, under the state of keeping the helium source open and forming helium plasmas, carrying out passivation treatment on the cavity surface of the bar, and accelerating the passivation process. According to the passivation method of the semiconductor device provided by the invention, the naturally cleaved bar is subjected to oxidation treatment, so that the thickness of the oxide on the cavity surface of the bar is uniform, the problems of incomplete cleaning and over-cleaning in the cleaning process are avoided, and the cavity surface is sequentially cleaned by utilizing hydrogen plasma and helium plasma. Passivation is carried out when a helium source is started, and the oxide layer can be thoroughly cleaned and easily passivated.

Description

technical field [0001] The invention relates to the technical field related to semiconductors, in particular to a passivation method for semiconductor devices. Background technique [0002] In order to improve the reliability of the cavity surface of the bar, the cavity surface coating process has become one of the key core technologies. Before the cavity surface coating of the cleaved bar, the cavity surface needs to be passivated; After treatment, it will be naturally oxidized, and an oxide layer is easily formed on the cavity surface, and the generated substance with a small band gap is easy to absorb light and generate heat. [0003] Therefore, it is necessary to clean the chamber surface before passivation. In the usual preparation process, the cleaved strips will be placed on the fixture first, and then transported to the chamber for cleaning after the strips on the fixture are full. When the first cleaved and last cleaved bars are subjected to the same plasma cleanin...

Claims

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Application Information

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IPC IPC(8): H01S5/028H01L21/02
CPCH01L21/02046H01L21/02247H01S5/0282
Inventor 张继宇李颖杨国文赵卫东
Owner 度亘激光技术(苏州)有限公司
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