Passivation method of semiconductor device

A semiconductor and device technology, applied in the field of passivation of semiconductor devices, can solve the problems of over-cleaning and incomplete cleaning, and different oxidation degrees of the cavity surface of the bar, so as to achieve uniform thickness and avoid different effects of cleavage time
CN112736641AActive Publication Date: 2021-04-30度亘激光技术(苏州)有限公司
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
度亘激光技术(苏州)有限公司
Publication Date
2021-04-30

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Abstract

The invention provides a passivation method of a semiconductor device, and relates to the technical field related to semiconductors, and the passivation method of the semiconductor device comprises the following steps: putting a cleaved bar into a chamber for oxidation treatment; vacuumizing, cleaning the cavity surface of the bar by using the formed hydrogen plasma, and cleaning the cavity surface of the bar by using the formed helium plasma; after the cleaning treatment, under the state of keeping the helium source open and forming helium plasmas, carrying out passivation treatment on the cavity surface of the bar, and accelerating the passivation process. According to the passivation method of the semiconductor device provided by the invention, the naturally cleaved bar is subjected to oxidation treatment, so that the thickness of the oxide on the cavity surface of the bar is uniform, the problems of incomplete cleaning and over-cleaning in the cleaning process are avoided, and the cavity surface is sequentially cleaned by utilizing hydrogen plasma and helium plasma. Passivation is carried out when a helium source is started, and the oxide layer can be thoroughly cleaned and easily passivated.
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Description

technical field

[0001] The invention relates to the technical field related to semiconductors, in particular to a passivation method for semiconductor devices. Background technique

[0002] In order to improve the reliability of the cavity surface of the bar, the cavity surface coating process has become one of the key core technologies. Before the cavity surface coating of the cleaved bar, the cavity surface needs to be passivated; After treatment, it will be naturally oxidized, and an oxide layer is easily formed on the cavity surface, and the generated substance with a small band gap is easy to absorb light and generate heat.

[0003] Therefore, it is necessary to clean the chamber surface before passivation. In the usual preparation process, the cleaved strips will be placed on the fixture first, and then transported to the chamber for cleaning after the strips on the fixture are full. When the first cleaved and last cleaved bars are subjected to the same plasma cleanin...

Claims

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