Integrated circuit device and fabrication using metal-doped chalcogenide materials

a technology of integrated circuit and chalcogenide, which is applied in the direction of instruments, cameras, vacuum evaporation coating, etc., can solve the problems of increasing the chance of contamination or other damage during transportation, time-consuming process, and traditional photo-doping process, so as to reduce the concern of contamination and physical damage, and improve the reliability of the device
US20050026433A1Inactive Publication Date: 2005-02-03LI JIUTAO +1
99 Cites 10 Cited by

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
LI JIUTAO
Publication Date
2005-02-03
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of low atomic weight, such as neon or helium. The plasma has a sputter yield sufficient to sputter a metal target and a UV component of its emitted spectrum sufficient to induce diffusion of the sputtered metal into the chalcogenide layer. Using such methods, a conductive layer can be formed on the doped chalcogenide layer in situ. In integrated circuit devices, such as non-volatile chalcogenide memory devices, doping of the chalcogenide layer concurrently with metal deposition and formation of a conductive layer in situ with the doping of the chalcogenide layer reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool, thus facilitating improved device reliability.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD OF THE INVENTION

[0001] The present invention relates generally to integrated circuit memory devices, and in particular to the metal doping of chalcogenide materials in the fabrication of chalcogenide memory elements and integrated circuit devices containing such memory elements. BACKGROUND OF THE INVENTION

[0002] Electrically programmable and erasable materials, i.e., materials that can be electrically switched between a generally resistive state and a generally conductive state are well known in the art. Chalcogenide materials are one class of examples of such materials finding use in the semiconductor industry, particularly in the fabrication of non-volatile memory devices.

[0003] Chalcogenide materials are compounds made of one or more chalcogens and one or more elements that are more electropositive than the chalcogens. Chalcogens are the Group VIB elements of the traditional IUPAC version of the periodic table, i.e., oxygen (O), sulfur (S), selenium (Se), tellu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More