Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes

a dielectric arc and feature size technology, applied in the field of maintenance, can solve the problems of increasing the maintenance cost of the chamber in terms of throughput, increasing and increasing the cost of carbon particulate byproducts of the deposition process, so as to reduce the foot print of the photoresist, the feature size is smaller, and the force exerted on the photoresist wall.
US20070117050A1Inactive Publication Date: 2007-05-24APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
APPLIED MATERIALS INC
Publication Date
2007-05-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.
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Description

[0001] The present application is a continuation application of U.S. application Ser. No. 10 / 724,454, which was filed Nov. 28, 2003, and which is currently pending.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller. In particular, the invention relates to a method of maintaining the adhesion of a photoresist to a surface during development of a pattern in the photoresist and to maintenance of the functionality of a chemically amplified photoresist on the surface of a dielectric anti-reflection coating (DARC).

[0004] 2. Description of the Background Art

[0005] As semiconductor devices are becoming ever smaller, the device features necessarily become smaller. To produce feature sizes in the range of about 124 nm, for example, a chemically amplified photoresist (CAR) is pattern imaged using a DUV wavelength in the range of about 248 nm. To pr...

Claims

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