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Tunable CVD diamond structures

a cvd diamond and diamond technology, applied in the direction of crystal growth process, polycrystalline material growth, transportation and packaging, etc., can solve the problems of long time-consuming and laborious, inability to produce the kind of quality diamonds, and scarcity of natural diamonds, so as to achieve the effect of improving properties

Inactive Publication Date: 2005-08-18
SCIO DIAMOND TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] The present invention provides a method and structure for providing synthetic monocrystalline diamond, adapted for use as in applications such as semiconductor devices, optical waveguides, and industrial applications. The synthetic monocrystalline diamond mentioned above refers to a single crystalline diamond structure having one or more diamond layers, at least one of which is formed by a CVD process. In preferred embodiments of the invention, the diamond layers will be “lattice-matched” to each other, meaning the layers will coexist without undue strain for a desired purpose. In other embodiments of the invention, the layers will be deliberately strained in relationship to each other to achieve another desired purpose. Either embodiment can be used, for instance, to direct electrons in the case of a semiconductor device or to direct photons in the case of an optical waveguide. Applicants have discovered the manner in which layered lattices can be “tuned” together, that is matched to eliminate strain and / or not matched, in order to introduce strain, and in turn, can be used to provide diamond structures with improved properties over those described in the art to date.

Problems solved by technology

Given their properties, diamond can be utilized in many diverse applications in industry, however its overall utilization has long been hampered by the comparative scarcity of natural diamond.
However, efforts thus far have not produced the kind of quality diamonds that were originally intended or desired.

Method used

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Examples

Experimental program
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Effect test

example 1

Growth Of (100) Oriented Single Crystal Diamond On Type IA Natural Diamond Using The Hot Filament Method

[0140] A natural type IA diamond single crystal is sliced on a diamond impregnated saw to yield a substrate of (100) orientation. The substrate is polished with diamond grit suspended in olive oil and impregnated into a cast iron plate to achieve a surface which is free of grooves, scratches or digs. This substrate is then cleaned with hot detergent in an ultrasonic cleaner, rinsed in acetone and dried. Following cleaning the substrate is placed in a hot filament chemical vapor deposition reactor (HFCVD) having a substrate heater consisting of a tungsten filament held within a molybdenum holder and having a rhenium filament approximately 10 mm from the substrate. The reactor is evacuated to a pressure of less than 10 millitorr and then backfilled to a pressure of 40 torr with hydrogen having a purity of 99.999% and at a rate of 100 sccm.

[0141] Power is applied to the rhenium fil...

example 2

Growth of (100) Oriented Single Crystal Diamond on Type IIa Natural Diamond Using the Hot Filament Method

[0144] A natural type IIA diamond single crystal is sliced on diamond impregnated saw to yield a substrate of (100) orientation. The substrate is polished with diamond grit suspended in olive oil and impregnated into a cast iron plate to achieve a surface which is flat and free of grooves, scratches or digs. The substrate is then cleaned with hot detergent in an ultrasonic cleaner, rinsed in acetone and dried. Following cleaning the substrate is placed in a hot filament chemical vapor deposition reactor (HFCVD) having a substrate heater consisting of a tungsten filament held within a molybdenum holder and having a rhenium filament approximately 10 mm from the substrate. The reactor is evacuated to a pressure of less than 10 millitorr and the backfilled to a pressure of 40 torr with hydrogen having a purity of 99.999% and at a rate of 100 sccm.

[0145] Power is applied to the rhen...

example 3

Growth of (100) Oriented Single Crystal Diamond on Type IB High Pressure Synthetic Diamond Using the Hot Filament Method

[0147] A high pressure synthetic type Ib diamond single crystal is ground and polished to yield a substrate with a (100) orientation. The substrate is then cleaned with hot detergent in an ultrasonic cleaner, rinsed in acetone and dried. Following cleaning the substrate is placed in a hot filament chemical vapor deposition reactor (HFCVD) having a substrate heater consisting of a tungsten filament held within a molybdenum holder and having a rhenium filament approximately 10 mm from the substrate. The reactor is evacuated to a pressure of less than 10 millitorr and then backfilled to a pressure of 40 torr with hydrogen having a purity of 99.999% and at a rate of 100 sccm.

[0148] Power is applied to the rhenium filament to achieve a temperature of 2100° C. whereupon power is applied to the substrate heater until the substrate reaches a temperature of 1000° C. as me...

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Abstract

Monocrystalline diamond, adapted for use as in applications such as semiconductor devices, optical waveguides, and industrial applications, in the form of a single crystalline diamond structure having one or more diamond layers, at least one of which is formed by a CVD process. The diamond layers are “lattice-matched” or “lattice-mismatched” to each other to provide a desired level of strain.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] The present application is a continuation patent application of a U.S. patent application filed Dec. 24, 2002 and assigned Ser. No. 10 / 328,987, which is a continuation-in-part of a US patent application filed May 14, 1999 and assigned Ser. No. 09 / 312,326, now U.S. Pat. No. 6,582,513, having a divisional U.S. patent application filed Apr. 8, 2003 and assigned Ser. No. 10 / 409,982; and in turn, of US provisional application filed May 15, 1998 and assigned Ser. No. 60 / 085,542, whereby the entire disclosures of all the above-referenced applications are incorporated herein by reference.TECHNICAL FIELD [0002] The present invention relates to synthetic monocrystalline diamonds, specifically relating to diamonds prepared using chemical vapor deposition (CVD). In particular, the invention relates to diamonds that are engineered to function in a variety of applications, some of which include semiconductor devices, optical waveguides, and industria...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C30B25/02C30B25/10
CPCC30B25/02C30B25/105C30B29/04Y10T428/24942
Inventor LINARES, ROBERT C.DOERING, PATRICK J.
Owner SCIO DIAMOND TECHNOLOGY CORPORATION