Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
a technology of semiconductor devices and removing apparatuses, which is applied in the direction of adhesives, decorative arts, electric discharge tubes, etc., can solve the problems of reducing yield, deteriorating uptime, and not being able so as to prevent the attachment of particles to the substrate and prevent the effect of particles being attached
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first embodiment
[0113] (First Embodiment)
[0114] The flow of cover operation timing in the first embodiment of the present invention is shown in FIG. 3 (a). At the time t1, immediately before the stopping of the high-frequency voltage, the cover 3600 that covers the substrate 3000 is closed and, at the instant that the high-frequency voltage is stopped, particles that fall toward the substrate 3000 are caught by the cover 3600. The cover 3600 remains closed during the introduction of the purging gas, at which time there is a high frequency of generation of particles and, after the introduction of the purging gas is stopped, at the time t2, immediately before the processed substrate is transported to outside the processing chamber 2100, the cover is opened. Thus, during the period of time when many particles P would fall onto the substrate, because the cover 3600 is in the closed condition, thereby reliably covering the substrate 3000, the attachment of the particles onto the substrate 3000 is preven...
second embodiment
[0117] (Second Embodiment)
[0118] The flow of cover operation timing in the second embodiment of the present invention is shown in FIG. 4. At the time t1, immediately before the stopping of the high frequency voltage, the cover 3600 that covers the substrate 3000 is closed and, at the instant that the high-frequency voltage is stopped, particles that fall toward the substrate 3000 are caught by the cover 3600. After the processed substrate 3000 is transported to outside the processing chamber 2100, at the time t3, immediately before the next substrate is transported into the processing chamber, the cover 3600 is opened. Thus, by operating the cover 3600 in this manner, attachment of particles that fall onto the substrate is prevented.
third embodiment
[0119] (Third Embodiment)
[0120] The flow of cover operation timing in the third embodiment of the present invention is shown in FIG. 5. At the time t4, immediately before the application of the high-frequency voltage, the cover 3600 that covers the substrate 3000 is opened and, at time t1, immediately before the high-frequency voltage is stopped, the cover is closed. By closing the cover when etching is not being performed, particles occurring because of peeling from the upper electrode 2200 or from the inside walls of the processing chamber 2000 are caught by the cover, thereby preventing the attachment of these particles to the substrate.
[0121] Furthermore, in addition to the above-noted configurations, it is possible to use a configuration in which a detection means is provided that detects that the cover has been placed in the closed condition, the result of the detection by this detection means being used to turn off the high-frequency power supply 2400.
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