Thin film transistor array substrate and manufacturing method thereof
a technology of thin film transistors and array substrates, which is applied in the direction of semiconductor devices, instruments, electrical devices, etc., can solve the problems of deteriorating display quality and deteriorating display quality of panels, and achieve the effect of improving display quality and increasing aperture ratio
Inactive Publication Date: 2007-07-05
LG DISPLAY CO LTD
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- Application Information
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Benefits of technology
The invention provides a thin film transistor array substrate and a manufacturing method that overcome limitations and disadvantages of the related art. The technical effects include avoidance of leakage current generation, increased aperture ratio, improved contact between a source electrode and a pixel electrode, simplified structure / process, and other advantages.
Problems solved by technology
Accordingly, a pixel voltage of the pixel electrode 18 is not uniformly maintained, thereby deteriorating the display quality.
Thus, a display quality of the panel is deteriorated.
Method used
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[0037]Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings.
[0038]FIG. 4 is a planar schematic diagram illustrating a portion of a thin film transistor array substrate according to an embodiment of the invention, and FIG. 5 is a sectional schematic diagram of the thin film transistor array substrate along II-II′ shown in FIG. 4. In FIGS. 4 and 5, a thin film transistor array substrate includes a gate line 102 and a data line 104 on a lower substrate 142. The gate and data lines 102 and 104 intersect each other with a gate insulating film 144 therebetween, and a thin film transistor 106 is provided at each intersection of the gate and data lines 102 and 104. In addition, a pixel electrode 118 is provided at a cell area defined by the intersection of the gate and data lines 102 and 104. Further, the thin film transistor array substrate includes a storage capacitor 120 provided at an overlapped...
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A thin film transistor array substrate includes a gate line and a data line intersecting each other on a substrate with a gate insulating film therebetween, a thin film transistor at an intersection of the gate line and the data line, the thin film transistor including a gate electrode electrically connected to the gate line, a semiconductor pattern overlapping the gate electrode with the gate insulating film therebetween, and a source electrode and a drain electrode above the semiconductor pattern, and a pixel electrode contacting the drain electrode of the thin film transistor, the drain electrode substantially completely overlapping at least one of the gate electrode and the gate line.
Description
[0001]The present invention claims the benefit of Korean Patent Application No. P05-0135020 filed in Korea on Dec. 30, 2005, which is hereby incorporated by reference in its entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The invention relates to a flat panel display device, and more particularly, to a thin film transistor array substrate and a manufacturing method thereof for a liquid crystal display device. Although embodiments of the invention is suitable for a wide scope of applications, it is particularly suitable for avoiding leakage current generation in a thin film transistor array substrate, to thereby improve the display quality.[0004]2. Discussion of the Related Art[0005]A liquid crystal display (“LCD”) device controls light transmittance of a liquid crystal material using an electric field, to thereby display a picture. In general, an LCD device includes a liquid crystal display panel having liquid crystal cells arranged in a matrix type, and a d...
Claims
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IPC IPC(8): H01L29/04
CPCG02F1/136286H01L27/124H01L29/78633G02F1/136
Inventor LIM, BYOUNG HO
Owner LG DISPLAY CO LTD