Solid-state imaging device, method for driving the same, method for manufacturing the same, camera, and method for driving the same
a technology of solid-state imaging and manufacturing methods, applied in the direction of color television, radio control devices, television systems, etc., can solve problems such as the decrement of vertical transfer efficiency, and achieve the effect of reducing pixel siz
Inactive Publication Date: 2007-08-16
SONY CORP
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Benefits of technology
This configuration maintains a large read electrode width for signal charges, reduces contact resistance, and addresses the challenges of pixel size reduction by ensuring complete signal charge readout with lower power consumption.
Problems solved by technology
Thus, hole processing for the contact sections 56 is difficult, and the contact resistance increases, which may cause degradation in vertical transfer efficiency.
Method used
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[0025] Specific embodiments of the present invention will be described in detail hereinafter with reference to the drawings.
[0026]FIG. 1 schematically shows a CCD solid-state imaging device, to which an embodiment of the present invention is applied. In FIG. 1, a two-dimensional array of photosensor sections 1 is arranged in an imaging area of the CCD solid-state imaging device. Each of the photosensor sections 1 has a photoelectric conversion function for generating a signal charge according to the amount of incident light and a charge storage function for storing the signal charge generated by photoelectric conversion. In the imaging area, a plurality of vertical transfer registers 2 also are disposed along the vertical axis with respect to the photosensor sections 1. The vertical transfer registers 2 have a structure in which a plurality of metal-oxide-semiconductor (MOS) capacitors (not shown) is vertically adjacent, and driving pulses are individually applied to the MOS capaci...
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A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the read signal charges. The two-layer vertical transfer electrodes have first transfer electrode layers and second transfer electrode layers, and the first transfer electrode layers serve as read electrodes for reading the signal charges from the photosensor sections. The first transfer electrode layers have a larger electrode width with respect to the photosensor sections than the second transfer electrode layers.
Description
CROSS REFERENCES TO RELATED APPLICATIONS [0001] The present invention contains subject matter related to Japanese Patent Application JP 2004-226264 filed in the Japanese Patent Office on Aug. 3, 2004, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a solid-state imaging device used in apparatuses such as cameras, a method for driving the solid-state imaging device, and a method for manufacturing the solid-state imaging device. The present invention further relates to a camera including the solid-state imaging device and a method for driving the camera. [0004] 2. Description of the Related Art [0005] In the related art, image sensors and digital cameras include charge-coupled-device (CCD) solid-state imaging devices of the interline transfer type. A CCD solid-state imaging device includes a two-dimensional array of photosensor sections and a plurality of vertical tr...
Claims
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IPC IPC(8): H01L29/768H01L27/148H04N25/00
CPCH01L27/14812H01L27/14683H01L27/146
Inventor FURUKAWA, JUNICHI
Owner SONY CORP